DMC3036LSD-13 Allicdata Electronics
Allicdata Part #:

DMC3036LSD-13-ND

Manufacturer Part#:

DMC3036LSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 30V 5A/4.5A 8-SOIC
More Detail: Mosfet Array N and P-Channel 30V 5A, 4.5A 1.5W Sur...
DataSheet: DMC3036LSD-13 datasheetDMC3036LSD-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 431pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The DMC3036LSD-13 is a 6x6 array of field effect transistors or FETs. It is made up of two individual die, one contains three channels and the other contains two. These transistors are constructed using an ion implanted process, which is a form of semiconductor manufacture. This process is used to increase the current carrying capacity of the device. The transistors are also pressure contact bonded to ensure good electrical performance. This technique is often used in the production of high reliability transistors.

The DMC3036LSD-13 is typically used as a switch for low voltage and current, or as a logic gate for controlling signals in low power circuitry. Its six outputs can be used for switching and control, or for more complex logic operations. Applications include data acquisition systems, industrial and automotive controllers, telecommunications, and wireless devices.

At the core of the FET array\'s working principle are the FETs themselves. Each FET consists of two diodes, a source and a drain. The action of the FET is like a switch, with an input voltage applied to the source, it is then passed through to the drain. The behavior of the FET is controlled by the reverse bias applied to the gate, which increases or decreases the forward current of the FET. In the case of the DMC3036LSD-13, the gate voltage can be varied from 0V all the way up to 10V, depending on the required application and conditions.

The DMC3036LSD-13 is well suited for applications that require low voltage and current, such as those mentioned above. Its superior performance and reliability make it an ideal choice for many different types of applications. With its compatible package, the DMC3036LSD-13 is an easy to implement solution for low voltage, low power cases.

The DMC3036LSD-13 has many advantages over other FETs in its application field, such as its low cost, reliable performance and small size. All of these factors make the DMC3036LSD-13 a great choice for those looking for a cost effective and reliable FET solution.

The specific data is subject to PDF, and the above content is for reference

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