DMC3025LSD-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMC3025LSD-13DITR-ND |
Manufacturer Part#: |
DMC3025LSD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 6.5A/4.2A 8SO |
More Detail: | Mosfet Array N and P-Channel 30V 6.5A, 4.2A 1.2W S... |
DataSheet: | DMC3025LSD-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | DMC3025 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.2W |
Input Capacitance (Ciss) (Max) @ Vds: | 501pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A, 4.2A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMC3025LSD-13 is a vertical FET transistor array designed to make circuit designs easier. It is a CMOS array that consists of two N-channel FETs and four P-channel FETs. These FETs are connected in parallel, forming a common source and a common drain. This makes the DMC3025LSD-13 great for compact circuit designs as it helps reduce the overall number of components as well as installation time.
The FETs can be used for various applications, including power supply switching, power switching, motor control and signal amplification. The DMC3025LSD-13 can also be used in common source and common gate amplifier circuits. It is especially useful for these applications as it has low on-resistance for both N-channel and P-channel FETs and excellent switching performance.
Furthermore, the DMC3025LSD-13 is designed to be highly reliable and thermally stable. Its FETs have been designed to run at temperatures up to 150 degrees Celsius and have excellent thermal stability. This ensures that the FETs will not overheat or become unstable during long usage periods. Additionally, the FETs have been designed to resist thermal stress, ensuring that the device can handle long periods of continuous operation without degrading its performance.
The DMC3025LSD-13 also has a range of safety features built into its design. It features a built-in thermal shutoff protection, meaning that the FETs will shut off if they become too hot. Additionally, it also features short-circuit protection, meaning that the FETs will be automatically shut off if they are subject to a short-circuited load. This ensures that the FETs are protected from any damage that may occur due to overload.
In terms of its working principle, the DMC3025LSD-13 is based on the operation of a MOSFET transistor. It works like any other MOSFET, in that it has its source and drain electrodes connected to a substrate. The substrate can be made from a variety of materials, such as silicon, titanium, or aluminum. When a voltage is applied to the gate electrode, the FET will conduct a current, thus controlling the flow of the source-drain current.
Because of its great features, the DMC3025LSD-13 can be used in a variety of applications. It is ideal for use in products such as power supplies, motor controllers, medical equipment, and any other application that requires high-temperature stability and reliable operation. Additionally, it is also ideal for use with high-power application, such as amplifiers and switching controllers. These applications require a high degree of on-resistance, which the DMC3025LSD-13 provides.
The specific data is subject to PDF, and the above content is for reference
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