DMC3028LSDX-13 Allicdata Electronics
Allicdata Part #:

DMC3028LSDX-13DI-ND

Manufacturer Part#:

DMC3028LSDX-13

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
More Detail: Mosfet Array N and P-Channel 30V 5.5A, 5.8A 1.2W S...
DataSheet: DMC3028LSDX-13 datasheetDMC3028LSDX-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.20000
10 +: $ 0.19400
100 +: $ 0.19000
1000 +: $ 0.18600
10000 +: $ 0.18000
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMC3028LSDX-13 is a series of high-density power array transistors, based on Pseudo-Darlingtom principle. It is a common application transistor in high power applications.

Working Principle:

DMC3028LSDX-13 transistors are based on the pseudo Darlingtom principle, which is essentially a cross between a conventional bipolar junction transistor and a field effect transistor. The pseudo Darlingtom transistor allows for a large current gain at low currents. It is a unipolar device, meaning that it only has one active region, unlike the bipolar transistor which has two. The pseudo Darlingtom transistor works on the principle of separating the electrons and holes in a junction, allowing for a relatively large current output, as opposed to a traditional bipolar transistor that utilizes a single junction for both electrons and holes.

Benefits of the pseudo Darlingtom principle:

The pseudo Darlingtom principle offers several benefits over the traditional bipolar junction transistor. These include:
  • High current gain. The combination of electrons and holes in the pseudo Darlingtom transistor creates a junction that can produce relatively large amounts of current at low voltage.
  • Low reverse breakdown voltage. The pseudo Darlingtom transistor has a reverse breakdown voltage of 5 volts, which is significantly lower than its traditional bipolar counterparts.
  • High switching speeds. The pseudo Darlingtom transistor can switch at very high speeds, making it ideal for high-speed applications.
  • Low operating power. The pseudo Darlingtom transistor has low operating power requirements, meaning that it can be used in a wide range of applications.
  • Heat dissipation. The pseudo Darlingtom transistor does not require external cooling, meaning that it can be used in a wide range of environments.

Applications:

DMC3028LSDX-13 transistors are designed for high power applications. They are often used in applications such as LEDs and laser diodes, power amplifiers, power supplies and switching converters, audio applications and as drivers for MOSFETs. They are particularly useful in high-speed applications, due to their high switching speed and low operating power requirements.

Conclusion:

The DMC3028LSDX-13 is a series of high-density power array transistors, based on the pseudo Darlingtom principle. It offers several advantages over the traditional bipolar junction transistor, including high current gain, low reverse breakdown voltage, high switching speeds and low operating power requirements. The DMC3028LSDX-13 is suitable for a wide range of applications, from LEDs and laser diodes to power amplifiers and switching converters.

The specific data is subject to PDF, and the above content is for reference

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