DMC3025LNS-7 Allicdata Electronics
Allicdata Part #:

DMC3025LNS-7-ND

Manufacturer Part#:

DMC3025LNS-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 31V 40V POWERDI333
More Detail: Mosfet Array N and P-Channel Complementary 30V 7.2...
DataSheet: DMC3025LNS-7 datasheetDMC3025LNS-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, 28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8
Description

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Transistors are electronic devices that can be used to control the flow of electricity or energy from one component to another. The most commonly used transistors are Field Effect Transistors (FETs), MOSFETs, and DMC3025LNS-7 Arrays. In this article, we will discuss the application field and working principle of the DMC3025LNS-7 Array.

The DMC3025LNS-7 Array is a type of field effect transistor (FET) based on the monolithic integration of two FET transistors, namely the N-type and P-type, in a single package. Its N-type device features a 25V drain-to-source voltage (VDS) and a drain current of 7A, while the P-type device has a 30V VDS and a drain current of 5A. The two transistors can be used either as separate devices or combined together to form an array. The array has a VDS of 30V and a combination drain current of 12A.

The DMC3025LNS-7 Array can be applied in various electronic applications, including power supplies, DC-DC converters, and motor controllers. It can also be used to switch high-frequency signals such as those used in radio frequency (RF) and microwave applications. Furthermore, it can be combined with other supplementary components, such as capacitors and resistors, for various applications, including relays and light-emitting diode (LED) drivers.

In terms of its working principle, the DMC3025LNS-7 Array functions similarly to other FETs, such as JFETs and MOSFETs. When the gate voltage is applied, a “channel” is created between the source and drain. The width of this channel is determined by the applied gate voltage. This causes carriers, such as electrons and holes, to flow through the channel, with the number of carriers dependent on the magnitude of the voltage. This results in a drain current that is proportional to the applied gate voltage, and the transistor is said to be “ON.” In this state, the transistor can be used to act as a switch, amplifier, or frequency converter.

When the gate voltage is removed, the channel closes, and the transistor is considered “OFF.” This state is referred to as the cut-off state and is used to turn the device off, for example, when switching off a motor or power supply. It should be noted that a higher drain current can result in the device’s operation at higher frequencies, thanks to the shorter switching time.

In conclusion, the DMC3025LNS-7 Array is a type of FET that can be used in a variety of applications, such as power supplies and DC-DC converters. It can be combined with other components, such as capacitors and resistors, to build more complex circuits. Its working principle is similar to that of other FETs and it can be used as a switch, amplifier, or frequency converter.

The specific data is subject to PDF, and the above content is for reference

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