DMC3032LSD-13 Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Arrays

DMC3032LSD-13 is a 4x20 array device, with a depletion type N-channel MOSFET structure. It is manufactured using the Dielectric isolated MOSFET (DIMOS) technology, which provides lower on-resistance and higher thru-hole power dissipation. For a given load current and gate voltage, the drain-to-source on-resistance in Ohms is: (Rsd = Rgd + [VGS-Vt])/VGS

Application Field

The DMC3032LSD-13 is ideal for applications such as automotive, industrial, and consumer electronics. Automotive applications include body, powertrain, and safety systems, such as starter motors and actuators. Industrial applications include sensors, lighting, and power systems including motor control and DC-DC converters. Consumer applications include audio power amplifiers and power supply circuits.

Working Principle

The DMC3032LSD-13 has an internal structure with four vertical MOSFETs in each 16-pin package. Depending on the given input voltages, it can support up to 20 circuits in total. The common source and the three source terminals form four source regions per device in the array. With a drain-to-source voltage of 1.0 V, the DMC3032LSD-13 can support a maximum drain current of 30 A, allowing for higher thru-hole power dissipation.

The working principle of the DMC3032LSD-13 is based on the field effect of the gate-source junction and the induced electric field. When a gate-source voltage, VGS, is applied, it creates an electric field that can control the flow of electrons through the channel between the source and the drain. The VGS is used to adjust the electric field, in turn controlling the conduction characteristics of the MOSFET. The device also has a built-in body diode which helps to protect the MOSFET by providing a low current path during leakage conditions.

The DMC3032LSD-13 is capable of operating with a wide range of gate-source voltages and drain currents. This makes it ideal for use in a wide variety of applications that require easy to use and reliable devices. Furthermore, the use of the DIMOS technology helps to minimize gate-drain capacitance, offering improved switching speeds and lower conduction losses.

Conclusion

In conclusion, the DMC3032LSD-13 is an array device featuring a depletion type N-channel MOSFET array technology, suitable for use in a wide range of applications. It is manufactured using the DIMOS technique for higher thru-hole power dissipation, lower on-resistance, and improved switching speeds. The device is also capable of handling large drain currents, making it ideal for power device applications.