
DMC3021LK4-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMC3021LK4-13DITR-ND |
Manufacturer Part#: |
DMC3021LK4-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V TO252-4L |
More Detail: | Mosfet Array N and P-Channel, Common Drain 30V 9.4... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Base Part Number: | DMC3021 |
Supplier Device Package: | TO-252-4L |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.7W |
Input Capacitance (Ciss) (Max) @ Vds: | 751pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A, 6.8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel, Common Drain |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMC3021LK4-13 is an array specifically produced by GE Measurement & Control Solutions. The type is SOT323 and it is a two N-channel MOSFET array component. This component is made from two N-channel MOSFETs, with a drain current rating of up to 1A at 18V and an on-resistance of approximately 300mΩ. Due to this, it can handle up to an 18V peak voltage and offers a RDS(on) rating of 0.5Ω. The component is designed to be used in a wide range of power management applications such as switching, amplifier circuits, and protection devices.
The application field and working principle of the DMC3021LK4-13 has vast applications as it is designed to offer higherefficiency, higher density, and low leakage current. It can be used as low side switches, driver and modulation circuits, switch-mode power supplies, and motor-control systems. This component can also be used as a component in a motor drive circuit to provide an H-bridge configuration. This is done by utilizing two DMC3021LK4-13, with each MOSFET operating for HIGH and LOW side through the H-Bridge.
In terms of working principle, the device is a two-MOSFET array that works based on the operation of N-MOSFET transistors. The device has two gates which are connected in series. These gates are used as ON/OFF control through the enable pin. When the enable pin is in ON mode, both gates will be connected to the gate voltage which will gate up both transistor simultaneously, while when the enable is set to OFF, both transistors are gated off and the device is off.
In order to efficiently make use of the device, several parameters need to be taken into consideration. These parameters include input voltage, gate threshold voltage, gate-source overdrive, drain current, body diode forward voltage, and on-resistance. Knowing and tuning these parameters will enable the device to work efficiently and will also help to avoid any premature damage to the component.
For power evaluation purposes, the device can be shorted between the Drain and Source pins. Shorting between the two pins will allow the device to take the stress from the power evaluation test and it should be done before any testing process. The device should never be powered up without a load as it can cause the device to get damaged easily.
Overall, the DMC3021LK4-13 is an array specifically designed by GE Measurement & Control Solutions. It has vast applications in the field of power management systems and offers superior performance. The device takes the N-MOSFET transistors to operate and offers various parameters which need to be taken into consideration for proper use. Settling the parameters and connecting the device to the load with a short between the Drain and Source pin will allow the device to perform to its full potential efficiently.
The specific data is subject to PDF, and the above content is for reference
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