DMP2036UVT-13

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DMP2036UVT-13 is a dual N-channel enhancement mode vertical metal oxide semiconductor field effect transistor (MOSFET). It was developed for high-speed switching applications, offering low gate charge, faster switching, and strong gate driving capability.

The DMP2036UVT-13 is a short channel Dual N-Channel MOSFET transistor. It is composed of a silicon substrate, two pins, and channels- one N-Channel and one P-channel-all positioned in a vertical configuration. As such, the transistor is ideal for providing high-frequency performance and low-static operation (Vth) while also exhibiting good positive thermal characteristics. As a result, it is suitable for high-frequency applicatons such as switching controllers and power converters.

The DMP2036UVT-13 has a gate-source breakdown voltage of 20 volts and a drain-source breakdown voltage of 40 volts. This allows it to be deployed in circuits such as automotive and industrial applications requiring higher breakdown voltages. In addition, the DMP2036UVT-13 has a low on-resistance of 4 ohms at 4.5V, and a maximum drain-source on-resistance of 8.5 ohms.

The DMP2036UVT-13 has a low gate charge, as it requires only 3.2 nano-coulombs to be fully activated. This helps to reduce switching times, making it particularly suited for high-speed, high-frequency switch applications. The easy-to-drive gate additionally improve switching speeds and reduce conduction losses due to gate drive narrowing.

The working principle of the DMP2036UVT-13 is based on the transfer of electrons across the channel or junction between the source and the drain. As the voltage applied to the Gate is increased, electrons will flow from the N-Channel into the substrate, creating an electron-depleted or “N-type” region. By increasing the Gate voltage, the drain and source pins of the transistor will be switched on, allowing electrons to flow through the channel between the source and the drain, thereby completing the circuit.

The DMP2036UVT-13 is suitable for various fields of application. It can be used in automotive and industrial applications requiring voltage and current switching, such as in power inverters, chargers, and DC-DC converters. It can also be used in consumer applications requiring high speed switching and low static current, such as in consumer electronic devices, audio amplifiers, oscillators and pulse generators, and other consumer applications.

In summary, the DMP2036UVT-13 is a dual N-channel enhancement mode vertical metal oxide semiconductor field effect transistor. It features a low gate charge, fast switching, and strong gate driving capability, making it suitable for use in applications requiring high speed switching and low static current. Its robustness and wide range of applications make the DMP2036UVT-13 an ideal choice for high-frequency applications requiring a dual N-channel MOSFET transistor.

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