DMP2012SN-7 Allicdata Electronics
Allicdata Part #:

DMP2012SNDITR-ND

Manufacturer Part#:

DMP2012SN-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 700MA SC59-3
More Detail: P-Channel 20V 700mA (Ta) 500mW (Ta) Surface Mount ...
DataSheet: DMP2012SN-7 datasheetDMP2012SN-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
FET Feature: --
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-59-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The DMP2012SN-7 is a type of single field effect transistor (FET) that is often used in various circuit designs and applications. It has several distinct characteristics, such as low capacitance, high operating temperature, a wide frequency range, and good thermal stability. Additionally, the DMP2012SN-7 has a low on-state resistance and is suitable for switching applications.

The principle at work with the DMP2012SN-7 is that of a "short channel vertical structure" FET. This type of FETs use an insulated gate as an electrical field, which connects the source and drain regions. A positive potential is applied to the gate, resulting in a negatively charged field. This reduces conductivity in the channel, effectively switching the FET off. When the potential is reversed, the field is weakened, allowing electrons to move freely in the channel and causing the FET to switch on.

The DMP2012SN-7 is most commonly used in applications where low capacitance is needed. It is also used in high frequency switching and is ideal for high power amplifiers. In addition, it is suitable for switching applications and for providing buffering in digital systems. Another major application for the DMP2012SN-7 is in tuning circuits, because of its low on-state resistance.

The DMP2012SN-7 is usually packaged as a surface mount device in an SOT-23 package, which makes for an extremely compact package. It also has a low threshold voltage and is suitable for operation with voltages ranging from 3V to 24V. This makes the DMP2012SN-7 suitable for a wide range of applications, including automotive, consumer electronics, industrial and communications.

The DMP2012SN-7 is also known for its high reliability, which is achieved thanks to its low input capacitance and its ability to operate at high frequencies. Additionally, it has a low gate charge, which helps to reduce switching losses and enables it to operate at high temperatures. This makes it suitable for use in high power applications where maximum efficiency is desired.

In summary, the DMP2012SN-7 is an advanced single FET suitable for a wide range of applications. It has several important characteristics such as low capacitance, high operating temperature, wide frequency range and good thermal stability. Furthermore, its low on-state resistance make it suitable for switching applications and for providing buffering in digital systems. All of these characteristics make it an ideal choice for applications where low capacitance is required.

The specific data is subject to PDF, and the above content is for reference

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