| Allicdata Part #: | DMP2066LSNDITR-ND |
| Manufacturer Part#: |
DMP2066LSN-7 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 20V 4.6A SC59-3 |
| More Detail: | P-Channel 20V 4.6A (Ta) 1.25W (Ta) Surface Mount S... |
| DataSheet: |  DMP2066LSN-7 Datasheet/PDF |
| Quantity: | 6000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SC-59-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.1nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 40 mOhm @ 4.6A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The DMP2066LSN-7 is a P-channel enhancement-mode power field-effect transistor (FET). It is specifically designed to operate from a single voltage source and used in various applications requiring low voltage, low-current and high input impedance. This MOSFET is offered in a SO 8 package which makes it suitable for low-power and space-efficient applications. In this article, we will discuss the application fields and working principle of the DMP2066LSN-7.
Application Fields
The DMP2066LSN-7 can be found in a number of applications where low voltage, low-current and high input impedance is necessary. These include LED displays, battery powered devices, low-power DC motor applications, solar panels, linear and switching power supplies and many more applications.Working Principle
The DMP2066LSN-7 is a Enhancement Mode Field Effect Transistor (MFET) with a P-channel. This FET has an insulated gate with a positive gate voltage that is used to control the conductivity of the drain and source. The P-channel field-effect transistor works based on the principle of majority carriers. The majority carriers are electrons and they are injected into the FET\'s semiconductor material. When a positive voltage is applied to the gate, the electrons are attracted and move towards the gate, which in turn increases the conductivity of the device.The gate voltage is responsible for controlling the drain current and drain-to-source voltage, making it the key element in controlling the operation of the device. In addition to this, the gate-to-source voltage can also be used to limit the maximum current through the device.Conclusion
The DMP2066LSN-7 is a P-channel enhancement-mode field effect transistor (FET) designed for applications requiring low voltage, low-current and high input impedance. This FET works based on the principle of majority carriers and controlled by a positive gate voltage. The DMP2066LSN-7 can be used in a variety of applications and is suitable for low-power and space efficient applications due to its SO 8 package.The specific data is subject to PDF, and the above content is for reference
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