DMP213DUFA-7B

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The DMP213DUFA-7B is a MOSFET transistor. The full part number is a Digitus 213DUFA-7B P-Pak MOSFET. This part is made by Japan-based manufacturer, Digitus Electronics Corporation. This part is classified as a single MOSFET and has a drain-source on-state resistance of 11.9 ohms. It has a drain-source breakdown voltage of 250 volts, a gate-source breakdown voltage of 800 volts, and a drain-source capacitance of 450 picofarads.

The DMP213DUFA-7B is used in a wide range of electronic applications, from audio amplifiers to motor control and power conversion. It is designed to prevent overheating and reduce power consumption, making it ideal for use in high-power applications. It also has an extended power range, making it suitable for devices that require high-current handling.

The DMP213DUFA-7B is a single MOSFET device. The primary characteristic of a single MOSFET is that it acts as an electronic switch. It can be used to control the flow of electricity in a circuit, allowing the users to change the characteristics of the voltage or current being supplied. The switching action is controlled by an external voltage source. When an appropriate voltage is applied, the MOSFET allows current to flow, while when the voltage is removed, it blocks the current flow. This makes MOSFETs well suited for controlling higher power applications, as the on/off switching action can be used to rapidly control the flow of power.

The DMP213DUFA-7B is also designed with an asymmetric power derating curve. This means that the maximum power it can handle decreases as the temperature of the device increases. This is designed to prevent overheating and to keep the device from failing due to short circuits. The power derating curve also means that the DMP213DUFA-7B can be used in applications that require a fast response time, as the device can quickly dissipate additional heat if the circuit experiences a sudden overload.

The DMP213DUFA-7B is a single MOSFET device with a drain-source on-state resistance of 11,9 ohms. It has a drain-source breakdown voltage of 250 volts and a gate-source breakdown voltage of 800 volts. It is ideal for use in power conversion and motor control applications, as it is designed to prevent overheating and reduce power consumption. It also has an asymmetric power derating curve, making it suitable for applications that require a fast response time.

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