Allicdata Part #: | DMP2101UCB9-7-ND |
Manufacturer Part#: |
DMP2101UCB9-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 20V 9UWLB |
More Detail: | Mosfet Array |
DataSheet: | DMP2101UCB9-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Preliminary |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The DMP2101UCB9-7 is an advanced chip transistor technology, combining several high performance components into one single integrated package. This technology is an array of Field-Effect Transistors (FETs) manufactured on a single submicron CMOS process, designed and engineered with the purpose of meeting the stringent requirements of many industries and applications.
The DMP2101UCB9-7 chip is a highly efficient, low power consumption and reliable transistor array, making it suitable for many diverse uses due to its wide variety of features. It is primarily used in high speed data communications, where the increased switching speeds of FETs are essential. Some commonly used applications of the DMP2101UCB9-7 include:
- Computer and server mainframes
- Networking devices
- Switching circuits
- Motor controls
- Telecommunication
- Power management
- Automotive and Industrial automation
The DMP2101UCB9-7 transistor array is made up of three FETs, each having its own source, drain and gate electrodes. A special bias voltage is applied to each of these electrodes which then produces a drain-source current (IDSS) between the source to the drain. The FETs can be used together as a two-way switch or on their own to control large voltage and current levels.
The FETs are arranged in an array with the diodes, resistors, capacitors and transistors embedded in the chip. This arrangement gives the FETs a wide range of operating parameters and control capabilities which makes them suitable for a variety of applications. The array of FETs can be used to regulate high-frequency signals, switch and control off-state voltage levels and provide current and voltage regulation for power management.
The DMP2101UCB9-7 transistor technology combines the three FETs into a single chip. This makes it a highly efficient and low-power solution for a wide range of applications. This technology is a three-terminal integrated structure and its three gate electrodes produce an electrical field near the gate which is used to control current between the source and the drain. The gate voltage is an important parameter for controlling the current flowing through the FETs.
In conclusion, the DMP2101UCB9-7 transistor array provides a highly efficient and reliable solution for a variety of applications. Its three FETs are arrayed to provide a wide range of operating parameters and control capabilities. This makes it suitable for high speed data communication, computer and server mainframes, networking devices, motor controls and other applications where the increased switching speed of FETs is essential.
The specific data is subject to PDF, and the above content is for reference
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