DMP2160UFDBQ-7

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMP2160UFDBQ-7 is a type of transistor array that is suitable for power management and level shifting applications, among other uses. It is a non-volatile FET, making it suitable for high temperature and extremely harsh environments. The design of the DMP2160UFDBQ-7 provides a very low RDS(ON) that results in improved power consumption and better noise tolerance.

FETs, or field effect transistors, are three-terminal devices which are constructed from two different materials separated by a thin layer of gate oxide. They are either n-type, meaning electrons are the majority carriers, or p-type, meaning holes are the majority carriers. MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are a type of FETs with a metal gate connected to the gate oxide. Varying the voltage of the potentially applied to the gate can control the current flow through the transistor.

Arrays, on the other hand, are simply sets of transistors that can be either p-type or n-type, and can be connected in a circuit to act as a single device. This is done by connecting several transistors in parallel, with all their source terminals tied together and all their drain terminals tied together. By connecting the source and drain terminals together, the array can be used to control the current flow in one direction or the other, or only through one or two of the transistors.

The DMP2160UFDBQ-7 is a single input, high power, non-volatile FET array that is used to provide power management and control in a variety of settings, from consumer electronics to industrial control applications. It is designed around three N-channel MOSFETs that are integrated into a single package, and it provides excellent RDS(ON), total gate capacitance and on-resistance matching.

As mentioned previously, the DMP2160UFDBQ-7 is an excellent choice for power management and level shifting applications as it is extremely low RDS(ON). This, coupled with its ability to charge quickly and its low gate capacitance, enables it to switch very fast, allowing it to be used in applications that require high speed and low power consumption. Additionally, it is specially designed to resist damage from electrical surges and thermal cycling, making it suitable for use in extremely harsh environments.

The DMP2160UFDBQ-7 is also particularly useful as a level shifter since it operates on a 0-12V operating range and is capable of controlling the flow of current between two different components. It can be used to drive high-current logic or digital signals with a lower voltage level, and can be used to isolate two circuits as well. This makes it an ideal choice for level shifting applications, as it enables the DMP2160UFDBQ-7 to act as an intermediary, allowing for the transfer of data between two different circuits.

In summary, the DMP2160UFDBQ-7 is a type of non-volatile FET array that is suitable for power management, level shifting, and other applications. It provides excellent RDS(ON) and gate capacitance, as well as excellent thermal and electrical surge protection, making it suitable for use in high temperature and harsh environments. Additionally, it is capable of controlling the flow of current between two different components, making it an ideal choice for level shifting applications.

The specific data is subject to PDF, and the above content is for reference