DTA113EET1G

DTA113EET1G is a single pre-biased BJT (Bipolar Junction Transistor) that belongs to the family of high-performance transistors created by NXP Semiconductors. This NPN transistor has a very low profile of 1.2mm and provides excellent performance at high frequencies. It is particularly well suited for frequency-dependent tasks, like signal gain and signal processing, due to its wide frequency range of 0-2.25GHz.

Application Field

The DTA113EET1G is well suited for a broad range of applications, including mobile radio and wireless communication applications. It can also be used in power amplifier designs, amplifier gain circuitry and antenna matching. This versatile device is also suitable for use in high dynamic range signal processing, signal conditioning, power management and switching circuits.

Working Principle

The DTA113EET1G is a single pre-biased BJT. This means that it has two electrodes – the base and emitter – that create a three-layer junction. The base layer is positively charged while the emitter layer is negatively charged. Incoming signals are sent to the base of the transistor, which is then amplified in the emitter layer. This is why BJTs are considered to be current-controlled devices. The amplified signal is then sent out from the collector.

When the DTA113EET1G is used in an application, it is typically set up as a common emitter amplifier. This configuration allows the highest voltage gain and input impedance. It is also possible to use the pre-biased BJT as a common base amplifier, which provides the highest current gain and lower input impedance. Either configuration can be used depending on the application and its requirements.

Conclusion

The DTA113EET1G is a versatile and powerful single pre-biased BJT that is perfect for frequency dependent tasks. It has excellent performance levels at frequencies up to 2.25GHz and can be used in a wide range of applications, including mobile communication, power amplifier designs and signal processing. The DTA113EET1G can be set up as a common emitter amplifier for higher voltage gain, or a common base amplifier for higher current gain.