DTA143ZMFHAT2L

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VMT3

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The DTA143ZMFHAT2L is a type of single-bipolar junction transistor (BJT) which is pre-biased and typically used in applications that require low-interface powers and a large capacitive load. This type of transistor has a number of features that make it well-suited for certain types of applications. One of the major features of the DTA143ZMFHAT2L pre-biased BJT is its low-interface power dissipation, which allows it to be used in mobile applications where power consumption is critical. Additionally, this type of transistor offers high speed operation and a large capacitive load that allow it to be used safely in applications where high-currents are present.The DTA143ZMFHAT2L is also known for its low parasitic values, which allows for reduced power dissipation, improved stability, and higher yields in production. Additionally, the pre-biased nature of this type of transistor further reduces power dissipation and makes it suitable for applications that require higher speeds. Furthermore, the DTA143ZMFHAT2L is constructed with a C-E junction that is normally closed, which allows for easy biasing of the transistor.The working principle of the DTA143ZMFHAT2L pre-biased BJT is relatively straightforward. The collector-emitter junction of the device is normally closed, which means that when the base is left open, no current flows through the device. When an external voltage is applied to the base of the device, however, the collector-emitter junction opens, allowing current to flow through the device. This current, in turn, is amplified by a factor of approximately 1000, depending on the nature of the external voltage.In summary, the DTA143ZMFHAT2L is a single-bipolar junction transistor (BJT) which is pre-biased and typically used in applications requiring low-interface powers and a large capacitive load. This type of transistor is well-suited for mobile applications due to its low-interface power dissipation, as well as for general purpose applications due to its high speed operation and large capacitive load. Additionally, the DTA143ZMFHAT2L is known for its low parasitic values, which further reduces power dissipation and improves stability. The working principle of this type of pre-biased BJT is relatively simple; its collector-emitter junction is normally closed, and when an external voltage is applied to the base of the device it opens, amplifying the current and allowing it to flow through the device.

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