DTA123ECAT116 Allicdata Electronics
Allicdata Part #:

DTA123ECAT116TR-ND

Manufacturer Part#:

DTA123ECAT116

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP -100MA -50V DIGITAL TRANSIST
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA123ECAT116 datasheetDTA123ECAT116 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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The DTA123ECAT116 is a single, pre-biased, bipolar transistor with a wide range of applications. It is designed for high-speed switching, high-voltage applications, and features a very low “on-resistance.” The DTA123ECAT116 offers excellent high-frequency performance for use in high-speed switching circuits, and can handle a wide range of input signals, allowing it to be used in a variety of applications.

The DTA123ECAT116 has a maximum collector current of 1 ampere and maximum collector-emitter voltage of 100 volts. The device is offered in a wide range of packages, including the TO252-3, SOT23-5, and SOT323-5 packages.

The working principle of the DTA123ECAT116 is based on the conduction of current between the emitter and collector terminals. The current flow is controlled by the base-emitter voltage, which is applied across the base-emitter junction. When a positive voltage is applied to the base, the base-emitter junction is forward-biased, allowing current flow from the emitter to the collector. The amount of current that flows between the emitter and collector terminals is determined by the base current and the amount of current flowing through the collector-emitter junction. When the base current is increased, the collector current increases as well.

The DTA123ECAT116 is used in a variety of applications, including high-speed switching, high-voltage, and audio applications. It is also used in high-frequency switching and signal conditioning applications. The device is also suitable for use in low-power applications, such as laser diode drivers and amplifiers. The DTA123ECAT116 is an ideal choice for applications where low-emission, high- efficiency switching is required.

The DTA123ECAT116 is also suitable for applications requiring long-term reliability, as it has a minimum guaranteed device lifetime. The device also has a low-noise design, making it well-suited for noise-sensitive applications.

In conclusion, the DTA123ECAT116 is a single, pre-biased, bipolar transistor with a wide range of applications. It is designed for high-speed switching, high-voltage applications, and features a very low “on-resistance.” The DTA123ECAT116 offers excellent high-frequency performance for use in high-speed switching circuits, and is also suitable for use in low-power applications. The device is an ideal choice for applications where low-emission, high-efficiency switching is required.

The specific data is subject to PDF, and the above content is for reference

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