Allicdata Part #: | DTA123ECAT116TR-ND |
Manufacturer Part#: |
DTA123ECAT116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA123ECAT116 Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA123ECAT116 is a single, pre-biased, bipolar transistor with a wide range of applications. It is designed for high-speed switching, high-voltage applications, and features a very low “on-resistance.” The DTA123ECAT116 offers excellent high-frequency performance for use in high-speed switching circuits, and can handle a wide range of input signals, allowing it to be used in a variety of applications.
The DTA123ECAT116 has a maximum collector current of 1 ampere and maximum collector-emitter voltage of 100 volts. The device is offered in a wide range of packages, including the TO252-3, SOT23-5, and SOT323-5 packages.
The working principle of the DTA123ECAT116 is based on the conduction of current between the emitter and collector terminals. The current flow is controlled by the base-emitter voltage, which is applied across the base-emitter junction. When a positive voltage is applied to the base, the base-emitter junction is forward-biased, allowing current flow from the emitter to the collector. The amount of current that flows between the emitter and collector terminals is determined by the base current and the amount of current flowing through the collector-emitter junction. When the base current is increased, the collector current increases as well.
The DTA123ECAT116 is used in a variety of applications, including high-speed switching, high-voltage, and audio applications. It is also used in high-frequency switching and signal conditioning applications. The device is also suitable for use in low-power applications, such as laser diode drivers and amplifiers. The DTA123ECAT116 is an ideal choice for applications where low-emission, high- efficiency switching is required.
The DTA123ECAT116 is also suitable for applications requiring long-term reliability, as it has a minimum guaranteed device lifetime. The device also has a low-noise design, making it well-suited for noise-sensitive applications.
In conclusion, the DTA123ECAT116 is a single, pre-biased, bipolar transistor with a wide range of applications. It is designed for high-speed switching, high-voltage applications, and features a very low “on-resistance.” The DTA123ECAT116 offers excellent high-frequency performance for use in high-speed switching circuits, and is also suitable for use in low-power applications. The device is an ideal choice for applications where low-emission, high-efficiency switching is required.
The specific data is subject to PDF, and the above content is for reference
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