DTA114ECA-TP Allicdata Electronics
Allicdata Part #:

DTA114ECA-TP-ND

Manufacturer Part#:

DTA114ECA-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 200MW SOT23
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114ECA-TP datasheetDTA114ECA-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03013
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: DTA114E
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DTA114ECA-TP is an NPN Silicon Epitaxial base Pre-Biased transistor designed specifically for low-noise applications operating over a wide range of temperatures. The device is tailored to low-noise current amplification circuits and is well suited for use in high-voltage applications. This application note will discuss the application field and working principle of the DTA114ECA-TP.

Application Field

The DTA114ECA-TP offers a wide range of applications. It is ideal for use in low-noise amplifiers, current amplifiers, high-voltage amplifier circuits, optical applications, and mixed-mode frequency filters. Additionally, the device can be used in reverse-polarity networks, such as multiplexers, limiters, and gain control circuits.

Working Principle

The DTA114ECA-TP is a Pre-Biased transistor with a high breakdown voltage and a low noise figure. It operates with a maximum junction temperature (TJ) of 150°C, allowing for efficient and reliable operation over a wide temperature range. The device utilizes an internal bias network that enables low-noise communication and signal amplification. The bias network is designed to maintain a constant operating temperature, which ensures optimal signal processing. The device features an NPN Silicon epitaxial base, making it a good choice for high-voltage applications due to its low-voltage variation. This makes the device an ideal choice for applications requiring frequent switching or detection of small signals. Additionally, the device\'s high input resistance and wide power gain allow for efficient operation in high-voltage circuits, such as H-bridges and half bridge circuits.The device also features a low noise-figure and a wide dynamic range. The low noise figure of the device makes it suitable for sensitive applications where low-noise communication is desired. Additionally, the device features a wide dynamic range, allowing it to operate over a wide frequency range while maintaining a constant voltage.

Conclusion

The DTA114ECA-TP is a Pre-Biased transistor designed specifically for applications requiring low-noise operation over a wide temperature range. The device features an NPN Silicon epitaxial base and a bias network, allowing for efficient and reliable operation in high-voltage circuits. Additionally, the device offers a low noise-figure and a wide dynamic range, making it an ideal choice for applications requiring frequent switching or detection of small signals.

The specific data is subject to PDF, and the above content is for reference

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