DTA144EEBTL Allicdata Electronics
Allicdata Part #:

DTA144EEBTLTR-ND

Manufacturer Part#:

DTA144EEBTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3F
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA144EEBTL datasheetDTA144EEBTL Datasheet/PDF
Quantity: 3000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 3000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: DTA144
Supplier Device Package: EMT3F (SOT-416FL)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Transistor Type: PNP - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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DTA144EEBTL is a versatile and universal transistor manufactured by Toshiba. It is a single pre-biased bipolar junction transistor specifically designed for high voltage applications. This versatile transistor is available in the TO-220FP package, with a collector-emitter breakdown voltage of 400 Volts and a collector current rated at 4.0 Amp. It is an ideal choice for driving high voltage circuits, especially for high voltage DC-DC converters and power supply circuits.

A bipolar junction transistor consists of two pn junctions, a base-emitter junction and a base-collector junction. When a forward bias voltage is applied between the base and emitter, a single electron-hole pair is created in the junction, allowing current to flow from the emitter to the base. This in turn causes a current to flow from the collector to the emitter, and thus the transistor amplifies the input current. The current gain of the transistor is controlled by the base current.

The DTA144EEBTL features several key features that make it ideal for high voltage applications. For one, it has an extremely low input capacitance which makes it ideal for high frequency applications. Additionally, it has an extremely high collector-emitter breakdown voltage, rated up to 400 Volts, making it suitable for high voltage circuits. It also has an integrated reverse-protection diode, which prevents damage to the device caused by reverse polarity.

The DTA144EEBTL is designed to operate in both AC and DC power management applications. In AC circuits, this device is useful as a fast switching device, allowing for quick and efficient control of the voltage. In DC circuits, the transistor can be used to control the input voltage to the load, ensuring optimal performance. Additionally, the DTA144EEBTL can be used as an isolator in switching circuits, allowing for a high degree of noise suppression.

The DTA144EEBTL is pre-biased, meaning that a bias voltage is applied to the base-emitter junction before the transistor is connected the circuit. This allows for faster switching times, as well as greater control over the operation of the device. Pre-biasing provides the ability to control the state of the transistor with minimal effort or time, while still providing superior performance.

In summary, the DTA144EEBTL is a versatile, universal transistor designed for high voltage applications. It features an extremely low input capacitance and an integrated reverse-protection diode, making it ideal for both AC and DC power management applications. Additionally, its pre-biased design allows for faster switching times and improved control over the operation of the device. Thanks to this versatile characteristics, the DTA144EEBTL is an ideal choice for driving high voltage circuits, especially for high voltage DC-DC converters and power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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