DTA123JMFHAT2L Allicdata Electronics
Allicdata Part #:

DTA123JMFHAT2LTR-ND

Manufacturer Part#:

DTA123JMFHAT2L

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP DIGITAL TRANSISTOR (WITH BUI
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA123JMFHAT2L datasheetDTA123JMFHAT2L Datasheet/PDF
Quantity: 8000
8000 +: $ 0.02381
Stock 8000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3
Description

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Bipolar Junction Transistors (BJTs) are commonly used in electronic circuits to amplify or switch signals, and have been around since the 1950s. Single, Pre-Biased BJTs are often used to obtain single-stage gain from bipolar transistors, as well as to reduce transistor count. Single, Pre-Biased BJTs, or DTA123JMFHAT2L transistors, are ideally suited for such applications. This article will provide an overview of the application field and working principle of DTA123JMFHAT2L transistors.

Typical applications for DTA123JMFHAT2L transistors include linear and switching amplifiers, logarithmic amplifiers, transistor switch and amplifier design, and many others. Due to the excellent gain provided by this type of transistor, they are often used in audio and communication amplifiers, such as power amplifiers, preamps and tone controls. Furthermore, they provide low noise characteristics, good linearity, low distortion and high accuracy. This makes them suitable for power regulation, and gain control applications as well.

DTA123JMFHAT2L transistors are composed of two NPN or PNP transistors, connected in series through their emitters, and the base of each transistor is pre-biased by resistors. This power supply configuration makes them more efficient in terms of noise and power dissipation, as well as providing greater flexibility in design. The two transistors are also connected in parallel through the collectors, and the emitters feed the base of each transistor. This creates an “over-driven” or pre-biased configuration, that allows for higher switching speeds and improved linearity.

The working principle of DTA123JMFHAT2L transistors is fairly simple. When a positive potential is applied to the base of the first transistor, it launches (or switches on) and current flows from the collector to the emitter. This causes a voltage drop across the collector and emitter, and since the emitter is connected to the base of the second transistor, the second transistor is also switched on. This creates a feedback loop that amplifies the signal across the two transistors. This creates a gain of approximately two times what is seen in a single transistor, allowing for higher performance.

By combining two bipolar transistors into a single pre-biased package, DTA123JMFHAT2L transistors allow for greater efficiency and improved performance compared to regular bipolar transistors. This type of transistor is an ideal solution for applications that require reduced power consumption and increased signal gain, such as audio and communication amplifiers, power regulation and gain control circuits, linear and switching amplifiers, logarithmic amplifiers, and transistor switch and amplifier designs.

The specific data is subject to PDF, and the above content is for reference

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