DTA124TETL Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	EMT3
Base Part Number:	DTA124

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The DTA124TETL is a single pre-biased bipolar junction transistor (BJT). It is an excellent choice for power, switching, and amplifier applications where a pre-biased device is desired. This device is frequently used for smaller signal applications as it offers fast switching speeds and high power dissipation.The DTA124TETL has an xmax of 0.8 V, a Vce of 400 mV, and a Vcrss of 12 V. Its maximum power rating is 16 W at 25°C. Its maximum Collector-Emitter saturation voltage (Vce(sat)) is 0.2 V, and its Maximum Power Dissipation (Pdmax) at 25°C is 6.25 W. The device is housed in a TO-220 package and features a Low Voltage package available in both SMD and through-hole versions for a variety of applications.The DTA124TETL is an NPN transistor with a high-speed switching Feature. It features an extremely low saturation voltage and is much higher than the saturation voltage of most NPN transistors. This device has a low turn-on voltage, which allows for a fast switching time. The DTA124TETL\'s maximum continuous collector current (Ic(max)) rating is 1.2 A and its transition frequency (fT) is 5 MHz.Working in pre-biased mode means that the DTA124TETL is already set up to be in a certain state before it is connected to a power source. This pre-biased setup is advantageous as it allows for a more efficient and accurate switching process. The device also has an effective temperature range of -55°C to 150°C.The working principle of the DTA124TETL is similar to other BJT transistors. The base and/or collector current flows through the two dissimilar semiconductor materials which form an electrical junction between them. This junction, called a base-emitter junction, forms a depleted region called the PN junction. This junction results in forward-bias or reverse-bias that can be measured in order to determine the junction’s resistance.As current flows through the PN junction of the DTA124TETL, it results in a voltage drop of 0.8 V across the base-emitter junction. This voltage drop is known as the xmax for the DTA124TETL and is used to compute the transistor\'s power dissipation. This voltage drop is also used to determine the transistor\'s transition frequency; as the base current increases, the transition frequency increases as well.Finally, the pre-biased setup of the device enables it to offer fast switching speeds and with its low saturation voltage, it is able to turn off the collector-emitter current quickly and accurately. This makes the transistor suitable for many different applications, such as power, switching, and amplifier applications. Since the DTA124TETL is a single pre-biased BJT, its advantages are obvious – it is smaller, higher power and allows for faster switching.

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