DTA143XEBTL Allicdata Electronics
Allicdata Part #:

DTA143XEBTL-ND

Manufacturer Part#:

DTA143XEBTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143XEBTL datasheetDTA143XEBTL Datasheet/PDF
Quantity: 1000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 1000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Base Part Number: DTA143
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The DTA143XEBTL, a single pre-biased Bipolar Junction Transistor (BJT), is a semiconductor device that has been increasingly applied for a wide range of applications. This type of device is quite versatile and hence is used in a variety of applications such as RF, power, and small signal amplification, switching, and interfacing, amongst others.

A BJT is primarily composed of three regions. Specifically, the BJT is composed of an emitter region, base region and collector region. An important mention should be made of the pre-biased feature, which refers to the fact that one of the three regions, i.e. the emitter, is biased to a negative voltage while the collector is biased to a positive voltage. This provides a more balanced and efficient operation, since both the emitter and the collector are operating near their optimal points.

In the context of its applications, the DTA143XEBTL is a BJT built in the form of a surface-mount small-outline transistor (SOT-153), which is subjected to high voltage under normal operation. This capability allows for it to be employed for many power switching applications, making it suitable for prboosting, trans-impedance amplifying and AC/DC conversion.

In terms of its working principle, the device employs operation due to the movement of charge carriers across the base region. This process is no different than one would observe in a common diode, but with the addition of an extra layer in the form of the base region. Electrons entering the emitter region form the emitter–base junction, where the electric field accelerates them through the base region. This process enables the electrons to travel through the other junction, i.e. the base–collector junction, and ultimately forward bias the collector junction. Moreover, a positive base-emitter voltage creates a larger electric field, thus allowing more current to flow, which results in greater amplifier gain.

Ultimately, the properties of the DTA143XEBTL BJT make it well-suited for a wide range of applications. In particular, its capability to handle high voltage and its stability under varying conditions make it the go-to device for a multitude of applications, such as power switching circuits, trans-impedance amplifiers and AC/DC converter circuits, amongst others.

The specific data is subject to PDF, and the above content is for reference

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