
Allicdata Part #: | DTA143XEBTL-ND |
Manufacturer Part#: |
DTA143XEBTL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 150MW EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.03000 |
10 +: | $ 0.02910 |
100 +: | $ 0.02850 |
1000 +: | $ 0.02790 |
10000 +: | $ 0.02700 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Base Part Number: | DTA143 |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The DTA143XEBTL, a single pre-biased Bipolar Junction Transistor (BJT), is a semiconductor device that has been increasingly applied for a wide range of applications. This type of device is quite versatile and hence is used in a variety of applications such as RF, power, and small signal amplification, switching, and interfacing, amongst others.
A BJT is primarily composed of three regions. Specifically, the BJT is composed of an emitter region, base region and collector region. An important mention should be made of the pre-biased feature, which refers to the fact that one of the three regions, i.e. the emitter, is biased to a negative voltage while the collector is biased to a positive voltage. This provides a more balanced and efficient operation, since both the emitter and the collector are operating near their optimal points.
In the context of its applications, the DTA143XEBTL is a BJT built in the form of a surface-mount small-outline transistor (SOT-153), which is subjected to high voltage under normal operation. This capability allows for it to be employed for many power switching applications, making it suitable for prboosting, trans-impedance amplifying and AC/DC conversion.
In terms of its working principle, the device employs operation due to the movement of charge carriers across the base region. This process is no different than one would observe in a common diode, but with the addition of an extra layer in the form of the base region. Electrons entering the emitter region form the emitter–base junction, where the electric field accelerates them through the base region. This process enables the electrons to travel through the other junction, i.e. the base–collector junction, and ultimately forward bias the collector junction. Moreover, a positive base-emitter voltage creates a larger electric field, thus allowing more current to flow, which results in greater amplifier gain.
Ultimately, the properties of the DTA143XEBTL BJT make it well-suited for a wide range of applications. In particular, its capability to handle high voltage and its stability under varying conditions make it the go-to device for a multitude of applications, such as power switching circuits, trans-impedance amplifiers and AC/DC converter circuits, amongst others.
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