DTA144TKAT146 Allicdata Electronics
Allicdata Part #:

DTA144TKAT146TR-ND

Manufacturer Part#:

DTA144TKAT146

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA144TKAT146 datasheetDTA144TKAT146 Datasheet/PDF
Quantity: 1000
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
Base Part Number: DTA144
Description

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Bipolar junction transistors (BJT) are common three-terminal devices used in electronic circuits. BJTs are composed of two junction diodes connected in series. A DTA144TKAT146, a type of single pre-biased BJT, is a commonly used, cost-effective transistor that can provide robust and reliable performance in different electronic applications.

The DTA144TKAT146 operates in the NPN type of transistor configuration, meaning that the positive electrode is connected to the base and the negative terminal is connected to the collector. This configuration allows for improved power dissipation and signal transmission for demanding applications such as switching, amplification, and signal processing. The DTA144TKAT 146 features pre-biased operation, meaning that the transistor is already configured for a specific voltage range, resulting in improved performance and faster time-to-market.

The DTA144TKAT 146 transistor is typically used in wide-band amplifier circuits, consisting of a two-stage circuit and a Bipolar Transistor Amplifier (BTA). This configuration provides wide-band amplification, allowing for improved noise reduction and signal fidelity. In addition, the BTA ensures that the bandwidth optimally remains within the specified voltage range, providing improved signal quality.

The working principle of the DTA144TKAT146 is based on the movement of electrons across the two PN junctions that form its structure. When an input signal is applied, the electrons can move from the emitter to the base terminal, thus increasing the current in the collector and creating an amplified output signal. The bias, or positive voltage, applied across the PN junction of the DTA144TKAT 146 transistor is typically set to a specific voltage range, ensuring that the amplified signal can be transmitted to the load at the desired level.

The DTA144TKAT 146 transistor is suitable for a variety of different applications, such as power switching, RF applications, amplifier circuits, audio circuits, and switching applications. The device is available in a variety of different packages, making it a flexible and cost-effective solution for different applications. Furthermore, its high switching speed, high noise rejection and low input capacitance make it a reliable component for demanding electronic applications.

In conclusion, the DTA144TKAT 146 transistor is a reliable and cost-effective component suitable for a variety of different electronic applications. The device features NPN configuration and pre-biased operation, providing robust and reliable performance in different electronic applications. The device is also suitable for RF circuits, power switching, amplifier circuits, audio circuits and switching applications. The device is available in a variety of different packages, making it a reliable and cost-effective solution for any application.

The specific data is subject to PDF, and the above content is for reference

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