DTA143TM3T5G Allicdata Electronics
Allicdata Part #:

DTA143TM3T5GOSTR-ND

Manufacturer Part#:

DTA143TM3T5G

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 260MW SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143TM3T5G datasheetDTA143TM3T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03202
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: DTA143
Description

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The DTA143TM3T5G is a single, pre-biased transistor within the category of bipolar junction transistors (BJT). It is used in high speed switching applications and also in low noise amplifier applications. This device has a voltage range of 150V and a peak current of 3A.

A bipolar transistor is a three terminal semiconductor device. It consists of two PN junction which are connected to the source, base and collector which act as the input and output. The device has three different current carrying states: the saturation state and the cutoff state. The collector-emitter voltage is used to control the current flow through the device.

The DTA143TM3T5G has a low saturation voltage, which means that the collector-emitter voltage is low when the device is operated in the saturation region. This makes the device suitable for applications in high frequency switching and amplification. It also has a low thermal impedance which provides good thermal stability.

The working principle of the device is based on the fact that when the base-emitter voltage is greater than the collector-emitter voltage, the current flows from the collector to the emitter. The device is designed to ensure that the voltage drop between the emitter and collector terminals is low, which allows the current to pass through the device with a minimal voltage drop. This makes the device suitable for high frequency switching, amplification and power supply applications.

The DTA143TM3T5G is mainly used in switching applications, as it has a high switching speed, and low saturation voltage. This makes the device suitable for applications in high frequency switching and amplification. The device is also suitable for low power, low noise amplifiers. Its low thermal impedance provides good thermal stability.

The DTA143TM3T5G is a pre-biased transistor, meaning it is biased with a specific voltage before being connected to the circuit. This makes the device suitable for applications requiring precise control over current flow. The pre-biased feature makes the device suitable for applications in both high frequency switching and low noise amplifier applications.

In conclusion, the DTA143TM3T5G is a single, pre-biased bipolar junction transistor mainly used in high-frequency switching and low noise amplifiers. It has a low saturation voltage and low thermal impedance, which makes it suitable for applications in high speed switching, amplification, and power supply.

The specific data is subject to PDF, and the above content is for reference

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