DTA113ZEFRATL Allicdata Electronics
Allicdata Part #:

DTA113ZEFRATLTR-ND

Manufacturer Part#:

DTA113ZEFRATL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP DIGITAL TRANSISTOR (AEC-Q101
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA113ZEFRATL datasheetDTA113ZEFRATL Datasheet/PDF
Quantity: 3000
3000 +: $ 0.02362
Stock 3000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
Description

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The DTA113ZEFRATL is a single pre-biased transistors, a kind of bipolar junction transistor (BJT). The DTA113ZEFRATL has a wide application in various kinds of electronic circuits, such as amplifiers, switches, and oscillators.

The DTA113ZEFRATL is designed with a series of features that make it a reliable and versatile transistor to use in many different applications. It has a high maximum current gain bandwidth product (fT), which makes it suitable for use in applications that require a wide bandwidth, such as radio frequency (RF) circuits. In addition, it has a low saturation voltage (VCE(sat)), which makes it suitable for use in low-power circuits. The DTA113ZEFRATL also has a high maximum collector-emitter voltage (VCE), which makes it suitable for use in high-voltage applications.

The working principle of the DTA113ZEFRATL is based on the operation of the PN junction, which is formed between the semiconductor layers of n-type (negative) and p-type (positive) materials. The PN junction acts as a barrier between the two materials, preventing carriers (electrons and holes) from passing through. When a DC voltage is applied to the PN junction, the carriers are prevented from passing through the junction, allowing current to flow through the transistor.

The operation of the DTA113ZEFRATL can be represented as a two-port circuit, with two terminals - one emitting and one collecting - and two diodes in between. The two diodes act as a closed-loop switch, allowing current to flow in one direction when the voltage across the two terminals is equal. However, when the voltage across the two terminals is unequal, current can flow in both directions. This is what allows the DTA113ZEFRATL to amplify or switch signals.

The DTA113ZEFRATL also has a unique pre-biased classification. This means that the transistor is pre-set at a predetermined current and voltage for optimal operation when it is first activated. This allows for more efficient operation than regular BJTs, which must have current and voltage adjusted manually.

The DTA113ZEFRATL can be used in many different applications, including power amplifiers, output stages, voltage regulators, and oscillators. Due to its wide application range, it is a versatile and reliable transistor to use in many different circuits. With its high fT, low VCE(sat), and high VCE, it can be used in a wide range of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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