Allicdata Part #: | DTA123JM3T5G-ND |
Manufacturer Part#: |
DTA123JM3T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA123JM3T5G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | DTA123 |
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The DTA123JM3T5G is a single, pre-biased transistor, part of a larger class of transistors known as bipolar junction transistors, or BJT. This type of transistor operates by controlling the flow of current between two semiconductor layers that make up a junction. The flow of current is controlled by applying an electric field or bias across the junction. This particular device is pre-biased, meaning the voltage between the two semiconductor layers is usually preset before operation.
The most common applications for this device are in amplifiers, audio receivers, and other audio-related circuits. It may also be used in any application where a low-power, low-noise switch is needed. Its non-linear characteristics also make it ideal for supplying or regulating power in circuits that use digital or analog signals.
The working principle of the DTA123JM3T5G is based on the standard PN junction theory. Within the device, current flows between the P-type and N-type layers when the voltage across the junction is sufficient. The current flow is increased or decreased depending on the voltage applied to the base terminal. This voltage change is known as the input voltage, and is responsible for determining the amount of current that flows through the device.
The output current is then determined by the output voltage, which is determined by the input voltage. The output voltage is equal to the input voltage minus a voltage drop, which is generally between 0.4 and 0.7 volts. This voltage drop is known as the forward voltage drop, or Vf. The amount of current that is allowed to flow through the device is the ratio of the output voltage divided by the forward voltage drop.
The DTA123JM3T5G transistors are usually manufactured using silicon material, although gallium arsenide transistors are also available. The device is available in a variety of packages, such as the through-hole SOT-223, SOT-23, SOT-89, and DIP-8. This particular device also features low noise levels, making it ideal for RF and audio applications.
The DTA123JM3T5G is a reliable, cost-effective, and efficient transistor. It is available in a wide range of packages, making it suitable for use in a variety of applications. It is suitable for use in any application that requires a low-power and low-noise switch. Its non-linear characteristics make it ideal for supplying or regulating power in circuits that use digital or analog signals. Overall, the DTA123JM3T5G is an ideal transistor for a variety of audio, RF and mixed-signal applications.
The specific data is subject to PDF, and the above content is for reference
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