DTA114TUA-TP

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Base Part Number:	DTA114T
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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DTA114TUA-TP Application Field and Working Principle

The DTA114TUA-TP is a single, pre-biased bipolar junction transistor (BJT) ideal for applications in high power switching, motor control, and industrial equipment. As a general-purpose device, this BJT also works well in audio/video equipment, consumer electronics, automotive, and various high-current applications. This article provides an overview of the product and describes its typical application field and working principles.

Features and Application Field

The DTA114TUA-TP is a NPN BJT with an emitter-base voltage rating of 40V. It has a power dissipation capability of 1.5W and a collector current of 4A. Its high switching speed and high gain make it well suited for high-power-switching applications and motor control applications. In addition, its low saturation voltage makes it suitable for automotive, consumer electronics, and other industrial applications.The DTA114TUA-TP features a pre-biased base, allowing it to operate over a wide range of collector current levels with minimum bias control requirements. This makes the device an ideal choice for high-current environments, such as motor control and industrial equipment.

Working Principle

The DTA114TUA-TP operates according to the general working principles of an NPN BJT. In its most basic form, the device consists of a base, an emitter and a collector. The base-emitter junction is forward biased when a small voltage is applied to the base terminal, while the collector-base junction is reverse biased.When the base-emitter junction is forward biased, minority carriers (electrons) are injected into the base region. These electrons are then drawn towards the collector due to the reverse bias applied to the base-collector junction, resulting in a current flow from the emitter to the collector. This current flow is known as the collector current, and is controlled by the base current.The amount of collector current generated is determined by the gain of the device, which is determined by the width of the base region. A wider base region increases the gain, resulting in higher collector current. This allows the transistor to operate over a wide range of collector current levels with minimum bias control requirements, making it an ideal choice for motor control and industrial applications.

Conclusion

The DTA114TUA-TP is a single, pre-biased NPN bipolar junction transistor designed for use in high-power-switching, motor control, and other industrial applications. Its pre-biased base allows it to operate over a wide range of collector current levels with minimum bias control requirements, making it an ideal choice for high-current environments. The device also features a high switching speed and a low saturation voltage, making it suitable for automotive, consumer electronics, and other industrial applications.

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