DTA114WKAT146

Resistor - Emitter Base (R2):	4.7 kOhms
Base Part Number:	DTA114
Supplier Device Package:	SMT3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	24 @ 10mA, 5V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DTA114WKAT146 transistor is a single pre-biased BJT device. It features an extremely compact package, making it an ideal choice for space-constrained applications, such as portable electronics and medical devices. This device is a great choice for low- to medium-power switching applications that demand low on-resistance and high off-resistance. The DTA114WKAT146 has a wide variety of uses across many industries, but it’s particularly suited for switching and power management in portable electronics and medical devices.The DTA114WKAT146 is a pre-biased BJT device, meaning that it\'s been charged up prior to its manufacturing. This process eliminates the need for an external bias circuit, reducing the size and cost of the finished product. The device is also very robust, featuring a long-term stability of 150V, making it suitable for a variety of applications, including automotive and industrial.The DTA114WKAT146’s base-emitter voltage (VBE) is a parameter that needs to be considered carefully when selecting a transistor. The VBE is the voltage required to switch the device on. This transistor has a VBE of 1.50V, which means it needs to be properly biased before use. This can be done with an external circuit or by using a pre-biased device that is already biased at the factory.The DTA114WKAT146 BJT device has a typical breakdown voltage of 140V. This parameter is important when designing with this particular device as it determines the maximum operating voltage of the device. The maximum DC current gain is also an important factor when designing with this device. The DTA114WKAT146 has a typical current gain of 200, meaning it is capable of switching 200 times its original current.The DTA114WKAT146 also has an impressive on and off resistance. The on resistance of this device is typically 0.3 ohms, allowing for low-loss switching. The off resistance of this device is typically 40 ohms, which means it can switch very high currents without the need of a snubber circuit.In conclusion, the DTA114WKAT146 pre-biased BJT device is a great choice for low- to medium-power switching applications that demand low on-resistance and high off-resistance. It offers an impressive range of features, such as a maximum DC current gain of 200, a typical breakdown voltage of 140V, and an on resistance of 0.3 ohms. The device is robust, featuring a long-term stability of 150V, making it suitable for a variety of applications, including automotive and industrial. The device is also very compact, making it an ideal choice for space-constrained applications.

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