| Allicdata Part #: | DTA114WSATP-ND |
| Manufacturer Part#: |
DTA114WSATP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS PNP 300MW SPT |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  DTA114WSATP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 24 @ 10mA, 5V |
| Base Part Number: | DTA114 |
| Supplier Device Package: | SPT |
| Package / Case: | SC-72 Formed Leads |
| Mounting Type: | Through Hole |
| Power - Max: | 300mW |
| Frequency - Transition: | 250MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | PNP - Pre-Biased |
| Part Status: | Obsolete |
| Packaging: | Tape & Box (TB) |
Description
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The DTA114WSATP is one of the single pre-biased transistors that exist within the bipolar junction transistor (BJT) family. The purpose of a pre-biased transistor is to provide a stable and ideal bias point for signal transitions in signal processing applications. This ensures that the transistor is in its active region and can optimally transition between its saturation and cut-off regions for the purposes of signal amplification or switching.To understand the DTA114WSATP, it is important to initially understand the basics of BJT transistors. BJTs consist of three layers of semiconductor material that are sandwiched together. These layers consist of an emitter, collector, and base— the names of which are descriptive of their functions. In particular, the emitter is the layer that emits electrons, the collector captures electrons, and the base is what controls the flow of electrons between the emitter and collector. The currents through these layers are termed emitter current, collector current, and base current respectively. The DTA114WSATP\'s performance depends on the construction of its “active region”. This is the region between the emitter and base, and is created by introducing ‘bias voltage’. This voltage is used to adjust the density of electrons and holes within this area. The bias voltage of the DTA114WSATP by default is fixed at 0.7 Volts and is the main factor in determining how quickly the transistor can transition between its active and cut-off regions. The DTA114WSATP is well suited for low voltage and low power applications, such as signal processing. It can be used to amplify, switch, transform, and manipulate signals. The transistor’s performance is determined by its collector-emitter voltage, and can be used for high-frequency modulation schemes with minimal distortion and noise. The DTA114WSATP is also a suitable option for use in power amplifier systems, such as those found in audio equipment. The transistor can be used to convert small electrical signals into a much larger voltage signal. This allows the power amplifier to efficiently boost the volume and detail of a signal while minimizing energy loss and distortion.In addition, the DTA114WSATP’s pre-biased construction makes it suitable for use in crossed-coupled pairs. These pairs are often used in smart-phones and other portable electronics, where space is at a premium and a low power usage is desired. The pre-biased construction of the DTA114WSATP makes it ideal for signal switching in these types of devices, as the pre-biased feature eliminates the need for a separate power supply.Overall, the DTA114WSATP provides a reliable and cost-efficient way to enhance signal processing. Its pre-biased nature eliminates the need for separate power sources, while its voltage and current control allow engineers to manipulate signals with precision and accuracy. Its flexibility and low price make it an attractive option for a variety of engineering applications.
The specific data is subject to PDF, and the above content is for reference
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