DTA115EET1 Allicdata Electronics
Allicdata Part #:

DTA115EET1OS-ND

Manufacturer Part#:

DTA115EET1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA115EET1 datasheetDTA115EET1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTA115
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DTA115EET1 single, pre-biased transistor is a high-performance BJT that has many important applications in a range of fields. It is both reliable and efficient, with an operating power of 80V and a collector current of 8mA. The device is constructed of an epitaxial layer and features two leaded packages for easy integration into circuits.

The DTA115EET1 is widely used in power electronics to provide efficient switching, amplification and regulation. Such devices can be used in switching power supplies, DC/DC converters, AC/DC converters, voltage regulators and current limiters. In these applications, the transistor\'s low collector-to-emitter voltages and low leakage current allow for more efficient power management, while its small package size allows for more compact design.

The DTA115EET1 is also commonly used in amplifier and oscillator circuits, such as audio preamplifiers and radio transmitters. In these applications, the device\'s reliable switching and low noise performance help maintain signal integrity. The device\'s low input and output resistances also contribute to its high-bandwidth gain characteristics.

The working principle of the DTA115EET1 revolves around the use of a reverse and a forward-biased junction separated by a thin layer of polarizing material. When a current is applied to the transistor\'s base and collector, the current passes through the reverse-biased junction, creating a voltage drop. This voltage drop attracts electrons from the collector to the base, creating a current flow from the collector to the emitter. This current flow, combined with the base current, determines the collector current that is used to manipulate the transistor\'s gain and bandwidth.

By using the principles of both forward and reversed-biased junctions, the DTA115EET1 can effectively control the flow of current and voltage, allowing for more efficient switching, amplification and regulation. The device is a highly useful and versatile tool in a range of applications, from consumer electronics to power management solutions.

The specific data is subject to PDF, and the above content is for reference

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