DTA123JCAT116 Allicdata Electronics
Allicdata Part #:

DTA123JCAT116TR-ND

Manufacturer Part#:

DTA123JCAT116

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP -100MA -50V DIGITAL TRANSIST
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA123JCAT116 datasheetDTA123JCAT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02511
6000 +: $ 0.02183
15000 +: $ 0.01855
30000 +: $ 0.01746
75000 +: $ 0.01637
150000 +: $ 0.01455
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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The DTA123JCAT116 is a single, pre-biased bipolar junction transistor (BJT) commonly used in many electronic applications. It is used as a high power passive electronic device with excellent switching times and frequency response capabilities. It is a small footprint device with built-in emitter, base and collector capacitors to reduce power losses. This device is optimized for operation in a wide range of applications where high voltage, high current, and high power needs to be handled.

The DTA123JCAT116 is characterized by low turn-on/off times and very low power dissipation. It has a reverse base-emitter voltage (BV) rating of up to 15V. It is primarily designed for use in high power, fast switching and power conversion applications since it provides good isolation and high gain characteristics. It also has a high voltage isolation ability to keep components from interfering with another. Furthermore, the device offers excellent temperature stability, even when dealing with very high current and power. This is because the device has a low thermal resistance and therefore a very low junction temperature.

In terms of its working principle, the DTA123JCAT116 is a three terminal self-biased transistor. Its three terminals are the emitter, base and collector. Its contraction is explained by the presence of minority carriers. These carriers come in the form of electrons in an n-type semiconductor and holes in a p-type semiconductor. When the device is turned on, these carriers cross into the base and inject themselves into the collector junction. As electrons leave the base in a p-type transistor, holes are created, which in turn attracts electrons from the emitter junction. This inversion forms an avalanche multiplication effect, allowing a greater current to be switched on and off.

The DTA123JCAT116 is capable of switching currents up to 200mA and can provide a maximum continuous collector-emitter voltage of 25V with a power dissipation of 0.6W. Its VBE(sat) is typically 0.2V. It is also highly stable and will maintain its switching characteristics over temperature ranges of -40°C to +85°C. These properties make the device robust and suitable for many applications where high switching times and high power operation are necessary.

This device can be used in many different applications, such as electric motor control, lighting control, DC – DC converters or power converters and amplifiers in audio applications. It is also used in automotive applications such as HVAC control and vehicle headlight control. It is found in many consumer electronics like televisions, washing machines and air conditioners. Moreover, it is used in industrial applications such as vibration monitoring, factory automation and robotic applications.

In conclusion, the DTA123JCAT116 is a single, pre-biased bipolar junction transistor (BJT) suitable for many different applications. It offers excellent switching times and frequency response capabilities, low turn-on/off times, low power dissipation, high voltage isolation, and good thermal resistance. As such, it is suitable for many different applications including motor control, lighting control, amplifiers and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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