
DTA123JUAT106 Discrete Semiconductor Products |
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Allicdata Part #: | DTA123JUAT106TR-ND |
Manufacturer Part#: |
DTA123JUAT106 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.02000 |
10 +: | $ 0.01940 |
100 +: | $ 0.01900 |
1000 +: | $ 0.01860 |
10000 +: | $ 0.01800 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | DTA123 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The DTA123JUAT106 is a single, pre-biased bipolar junction transistor (BJT). It is a high power and high voltage device, as it can handle up to 105V of collector-emitter voltage, and more than 1500 mA of collector current. It is also considered to have an operating temperature range from -55oC to 150oC, making it suitable for construction in an environment where extreme heat or cold may be present. As such, it is typically used in applications where high current flows, such as in automotive and industrial settings.
The DTA123JUAT106 is a three-terminal device, comprising of an emitter, a base and a collector. It is a common-emitter, NPN transistor which operates in the normal active region, but with the base and collector already pre-biased to a particular voltage and current. The pre-biased base and collector offer advantages in terms of reduced startup time, as well as improved overall circuit simplicity. There are also no external biasing resistors required, as the pre-biased output can be set directly at the desired voltage and current levels.
This transistor is also available with an isolated NPN or PNP configuration, allowing it to be used in a variety of different applications. It is also capable of handling high frequency signals up to the GHz range, therefore making it attractive for use in high speed circuits. Its high power capabilities make it extremely useful for applications handling high voltages and currents such as motor control, DC-DC converters and power amplifiers. It is also suitable for use in analog and digital signal processing circuits such as filters, mixers, and A/D converters.
The working principle of the DTA123JUAT106 is similar to any other transistor, whereby when a potential is applied to the base-emitter junction, an amplification occurs in which a current is allowed to flow between the collector and emitter. This amplification can be regulated by the base and collector voltages, as well as the base current. With a pre-biased output, the bias point is already preset, so it can be used with a minimal amount of additional components, simplifying overall circuit design. This is advantageous in applications requiring fast switching times and minimal power dissipation.
In conclusion, the DTA123JUAT106 is a pre-biased, NPN transistor suitable for performing high power, high speed operations. Its pre-biased setup offers a number of advantages such as reduced power dissipation and startup time, as well as simplified circuit design. It is suitable for use in high voltage and current applications such as motor control, DC-DC converters, and power amplifiers. It can also handle high frequency signals up to the GHz range, making it ideal for use in high speed circuits.
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