Allicdata Part #: | DTA124EU3T106TR-ND |
Manufacturer Part#: |
DTA124EU3T106 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | PNP -100MA -50V DIGITAL TRANSIST |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA124EU3T106 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02193 |
6000 +: | $ 0.01978 |
15000 +: | $ 0.01720 |
30000 +: | $ 0.01548 |
75000 +: | $ 0.01376 |
150000 +: | $ 0.01147 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA124EU3T106 is a transistor specifically designed for use in low-power electronic applications. It is a single, pre-biased, bipolar junction transistor (BJT) with a maximum DC collector current of 600mA. The transistor is available in three package configurations: SO8, SOT23, and TO252. This type of transistor is frequently used in the production of digital logic circuits, radio frequency (RF) circuits, and other low-power inverter applications.
The DTA124EU3T106 has a maximum collector-base breakdown voltage of 70V and a maximum power dissipation of 625mW. Its wide frequency range and low channel-to-channel leakage current, coupled with its fast switching characteristics, make it ideal for low-power digital applications. Additionally, its small package size allows for more devices to be placed in a smaller footprint, making it ideal for use in space-constrained designs.
The transistor is composed of three main components: the emitter, the base, and the collector. A small emitter current flowing through the emitter-base junction generates a larger collector current, which is ultimately used in the circuit. This principle of operation is known as minority carrier injection and is the basis of how BJTs work.
The working principle of the DTA124EU3T106 is relatively simple. When a voltage is applied to the base, it induces a larger current in the collector, which is then used in the desired application. This current can be further increased or decreased by increasing or decreasing the applied voltage. The gain of the transistor is the ratio of the collector current to the base current, and is a measure of how well a transistor amplifies signals. The current gain of the DTA124EU3T106 ranges from 100 to 140, making it suitable for a variety of low-power applications.
The DTA124EU3T106 is mainly used in low-power electronic applications that require efficient amplification and switching in a very small package size. Common applications of the transistor include motor control, robotics, LED drivers, and small inverters. It is especially useful in designs involving many components, due to its small footprint and fast switching times.
In conclusion, the DTA124EU3T106 is an ideal choice for low-power electronic applications such as motor control, robotics, LED drivers, and small inverters. Its wide frequency range, low channel-to-channel leakage current, and fast switching characteristics make it an ideal choice for any application requiring efficient amplification and switching in a very small package size.
The specific data is subject to PDF, and the above content is for reference
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