DTA143EET1 Allicdata Electronics
Allicdata Part #:

DTA143EET1-ND

Manufacturer Part#:

DTA143EET1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143EET1 datasheetDTA143EET1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTA143
Description

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Bipolar Junction Transistors (BJT) are widely used in electronics and range from many types and sizes. One of them is the DTA143EET1, which is a single, pre-biased NPN transistor. It is known for its fast switching, low on resistance and reliable performance. The DTA143EET1 is often used for applications such as low-voltage power switching, computing, and audio amplification.

The DTA143EET1 is most commonly found in printed circuit boards and is easily mounted. It has a plastic surface mount case and is approved for safety regulations. In addition to its fast switching, it offers low forward voltage drop and high voltage operation. The DTA143EET1 is designed to operate at up to 10km altitude and temperatures ranging from -40°C to +125°C and can withstand a maximum peak in-line current of 0.35A.

The working principle of the DTA143EET1 is based on the classic BJT transistor design. It is composed of a base, emitter, and collector region. The emitter is the base of the transistor and provides electrons to the collector. The collector is the most heavily doped side of the device, and the base is the least heavily doped side. The device is biased in a way to ensure that the electrons from the emitter are properly transported to the collector region.

The base-emitter junction of the DTA143EET1 is forward biased, meaning the potential difference between it is positive and electrons flow from the base to the emitter. This causes current flow from the collector to the emitter, which produces its desired effects.

The DTA143EET1 is a very versatile and reliable device, making it an ideal choice for many applications. Its low voltage drop and high temperature operation make it suitable for many power switching applications. The devicecan also be used in computing, audio amplification, and many other applications.

In conclusion, the DTA143EET1 is a single, pre-biased NPN transistor with many features that make it ideal for many applications. Its fast switching, low on resistance and reliable performance makes it a great choice for power switching, computing, audio amplification, and many other applications. It is a versatile device that is easily mounted on circuit boards and offers high voltage operation and low forward voltage drop.

The specific data is subject to PDF, and the above content is for reference

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