DTA143EKA-TP Allicdata Electronics
Allicdata Part #:

DTA143EKA-TP-ND

Manufacturer Part#:

DTA143EKA-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 200MW SOT23-3L
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143EKA-TP datasheetDTA143EKA-TP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Base Part Number: DTA143E
Supplier Device Package: SOT-23-3L
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The DTA143EKA-TP Transistor is a single-base transistor, pre-biased for minimum current consumption. It is a contemporary, discrete semiconductor device for commercial, industrial, or automotive applications. This device is available in a variety of rating combinations addressing a wide range of operating conditions.

The DTA143EKA-TP is ideal for amplification and switching applications in a variety of industries including instrumentation, channel and bypass amplifiers, power conversions and signal processing. It offers enhanced efficiency and operational performance with the ability to handle higher currents, faster switching speeds and lower on-voltages. The device also contains a wear leveling feature which extends its operational lifetime.

The working principle of the DTA143EKA-TP Transistor is based on the transfer of electrons between its two electrodes: the base and the collector. The base acts as an electrical gate for the electrons to flow from the collector to the emitter. The two electrodes form a semiconductor junction that allows the flow of current between them when an electric field is applied. A current is generated from the collector and flows through the base, depending on how much voltage is applied.

The DTA143EKA-TP Transistor’s pre-bias feature is especially beneficial in automotive applications, where it provides superior performance in switching and amplification. The device’s pre-bias feature helps reduce the amount of current draw during certain periods of inactivity, resulting in better efficiency and improved power use. This enhanced performance helps to prolong the life of the device, particularly in automotive applications which are increasingly dependent on efficient, reliable power sources.

The DTA143EKA-TP Transistor is an excellent choice for most commercial and industrial applications where improved efficiency and enhanced performance play major roles in selecting a device. With its fast switching times and reduced power draw, the device’s pre-bias feature increases system performance while saving energy and reducing the total cost of ownership.

The specific data is subject to PDF, and the above content is for reference

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