Allicdata Part #: | DTA143ZUA-TPMSTR-ND |
Manufacturer Part#: |
DTA143ZUA-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143ZUA-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03013 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | DTA143Z |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA143ZUA-TP is a single pre-biased transistors - bipolar (BJT) device that has a wide range of uses. It is particularly well suited for use in high voltage applications such as switched mode power supplies, pulse-width modulators and voltage regulators.
The DTA143ZUA-TP is a NPN transistor that features a wide range of features to support its use in many different applications. It has a low breakdown voltage (VCEO), with a maximum of 315V, a low saturation voltage (VBE) of 0.2V, and a maximum collector current rating of 1.5A. It is designed to be used with a pre-biased configuration and can be used with either positive or negative polarities. This allows it to be used in applications that require both high voltage and high current operations.
The DTA143ZUA-TP also has a low minimum operating temperature range of -40°C to 85°C. This enables it to be used in extreme environmental conditions. Additionally, it has a low experience levels of noise, ensuring optimal operation in noisy environments. It is a very low-noise device that is suitable for this type of application.
The working principle of the DTA143ZUA-TP is based on a bipolar junction transistor (BJT) device. This type of transistor uses the semiconductor properties of a p-n junction to amplify an input signal. It is made up of three layers, an emitter, base and collector, each of which is connected to the other two layers via a junction. When a small bias current is applied to the junction, the emitter-base junction turns on and the collector-base junction turns off, which allows current to flow from the emitter to the collector.
The working principle of the device can be further explained by looking at its characteristics. Its low breakdown voltage, low saturation voltage, and wide temperature range makes it particularly useful for high voltage applications, while its low experience levels of noise make it an ideal choice for noisy environments. Additionally, its pre-biased configuration simplifies the construction of circuits and improves efficiency.
In summary, the DTA143ZUA-TP is a single pre-biased transistors - bipolar (BJT) device that has a wide range of uses. It is suitable for use in high voltage applications, is low noise, and has a wide temperature range. Its working principle is based on a bi-polar junction transistor (BJT) device, which can be further explained by its characteristics. Overall, it is a very useful device for many applications that require high voltage and high current operations.
The specific data is subject to PDF, and the above content is for reference
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