DTD113EKT146 Discrete Semiconductor Products

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The DTD113EKT146 is a high-voltage pre-biased NPN transistor from ST Microelectronics. It is categorized as a single bipolar junction transistor (BJT), and is designed for applications that require high voltage and large current capacity.

This device is composed of two electrodes (base and emitter) which, when exposed to current, creates a forward ion flow resulting in a voltage drop across the base-emitter junction. The base-collector junction creates a further voltage drop, resulting in the generation of a new current that is both the result of the bias voltage and the current passing through the device. This combination of bias voltage and current results in the creation of two current paths, allowing the device to switch between two different states: on and off.

The DTD113EKT146 is used in a variety of applications, including power switching, motor control, amplifying, and oscillator circuits. Its wide operating range and high voltage capacity make it ideal for a variety of applications, including automotive systems, industrial applications, and telecommunications. The device is 0.9A continuous collector current and can withstand a maximum voltage of 150V. The power dissipation for the device is rated at 600mW.

The DTD113EKT146 is also very reliable. It has high reliability ratings of up to 230V Reverse breakdown voltage, and its high-temperature circuit operation allows it to function in temperatures of up to 125°C. This makes the device suitable for a wide range of high-temperature applications, including computer peripherals and any other application where high temperatures are present.

In terms of its working principle, the DTD113EKT146 utilizes the two-terminal current-controlled base-emitter voltage operation. When a small current passes through the base-emitter junction, the resulting voltage drop increases exponentially, resulting in a collector-emitter current gain. This gain is determined by the ratio of the collector to the base current, making it an important parameter when designing any circuit. When the base current exceeds a certain level, the device can enter saturation, allowing the collector to pass a considerably larger current to the load when compared to the base current.

In conclusion, the DTD113EKT146 is a pre-biased NPN transistor manufactured by ST Microelectronics. It is a single bipolar junction transistor (BJT) and is commonly used in power switching, motor control, amplifying, and oscillator circuits. Its features include a wide operating range, high voltage capacity, and reliability ratings of up to 230V Reverse breakdown voltage. Its two-terminal current-controlled base-emitter voltage operation allows it to be used for a variety of applications, making it a versatile and reliable device choice.

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