DTD123ECT116 Discrete Semiconductor Products

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The DTD123ECT116 is a single, pre-biased bipolar junction transistor (BJT). It is commonly used in many commercial and industrial applications, such as integrated circuits, switches, and computers. This device is a general-purpose BJT with an emitter-base junction that is forward biased during operation.

The DTD123ECT116 is a medium power, general-purpose NPN BJT in a TO-220 package. It is a single, pre-biased type transistor, with a VCE sat of 5V and a maximum Pulsed Collector Current ICP of 125mA. It has a wide operating temperature range of -65°C to 200°C and a low spread of 0.1% over the temperature range.

The DTD123ECT116 is designed for medium power applications and is used in a variety of circuits such as amplifiers and switches. In an amplifier circuit, the DTD123ECT116 is used to amplify the signal from an input source. The input signal is applied to the base terminal, and this causes the collector current to increase, which in turn increases the collector-emitter voltage. This amplified output is then taken from the collector terminal.

In a switch circuit, the DTD123ECT116 is used to control the flow of current through a load. The base terminal of the transistor is connected to an input voltage or current source. When the input voltage or current is applied, it turns the transistor on, thus allowing current to flow through the transistor. The current flow is then controlled by the applied input voltage.

The working principle of the DTD123ECT116 is based on the base-emitter junction. When a forward bias voltage is applied between the base and emitter, it creates a small-signal forward voltage drop. This enables electrons to flow through the base-emitter junction. This creates a hole-electron pair in the transistor’s base region, causing a current to flow between the collector and emitter. This current flow is known as the collector current. As the collector current increases, the collector-emitter voltage also increases, thus amplifying the input signal.

The DTD123ECT116 is an excellent choice for a wide variety of applications. Its medium power and thermal stability make it ideal for a variety of applications. Additionally, its low spread of 0.1% over the temperature range ensures that the transistor operates consistently and reliably.

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