DTD114GCT116 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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The DTD114GCT116 is a type of single, pre-biased transistor with built-in base-emitter junction. It is a high-voltage, high-current NPN Darlington transistor that allows up to 400 volt collector-to-emitter voltage, features 600 mA collector current, and can provide up to 1.2 W of collector dissipation. This transistor is designed for voltage-controlled switch control circuits and for high-current amplification applications.The DTD114GCT116 is particularly useful for applications in the automotive industry, owing to its wide operating temperature range from -55°C to 150°C. This transistor is therefore suited for harsh environments where temperatures fluctuate more than normal.The DTD114GCT116 is composed of two NPN transistors arranged so that one transistor base is connected to the other transistor\'s collector. This combination allows a large current gains from a relatively small input current, making this transistor much more efficient.The DTD114GCT116 working principle is based on the construction of the two NPN transistors. When a current is applied to the base of the first NPN, current is allowed to flow through the emitter of the first transistor, which then causes the collector current of the second transistor to increase. This increase in the collector current then causes the base of the second transistor to become more conductive, which in turn allows a larger amount of current to flow through the emitter of the second transistor. This increased current flow then causes the collector current of the first transistor to become larger again, and so on.The result is that a relatively small bias current will cause a large current to flow from the collector to the emitter of the second transistor. This "amplified" current is then used for power applications.The DTD114GCT116 is a cost effective, reliable device for a variety of applications, including audio amplifiers, DC motor controllers, and power switching circuits. The wide operating temperature range and high current gain of this transistor make it well suited for such use, and its robust construction helps to ensure a long working life.

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