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Bipolar junction transistors (BJT) of the single, pre-biased type offer users many benefits over the uni-polar transistor, including higher speed, better reliability, and improved collector-base voltage. In addition to these advantages, these transistors are also preferred for their smaller size and improved power handling characteristics. This article will discuss the applications and working principle of the single, pre-biased bipolar junction transistor.

Applications

Single, pre-biased bipolar junction transistors are widely used in the telecommunications, computer and video industries. In particular, these devices are typically employed in amplifiers, switching circuits, logic gates, signal generators and signal processors. Bipolar transistors have also been used in medical equipment, where their reliability and power handling capabilities are essential. Additionally, the smaller size of these devices makes them particularly suitable for space-critical applications.

The single, pre-biased BJT also has advantages in its excellent linearity, making it a great choice for video applications. These devices have excellent signal-to-noise ratios, meaning they can accurately reproduce detailed images. Other applications of these transistors include radio frequency (RF) amplifiers, mixers, oscillators, modulators and demodulators, as well as DC-to-DC converters. Pre-biased BJTs are also well suited for use in power amplifiers, since they offer improved power efficiency over the uni-polar transistor.

Working Principle

Single, pre-biased BJTs are constructed of three layers of semiconductor material, which are known as the base, collector, and emitter. When a current is passed through the base and emitter, it creates a current bin the collector. The current flow is proportional to the current in the base, thus allowing a single, pre-biased BJT to be used to amplify or switch an electrical signal.

The emitter of the single, pre-biased BJT must be forward biased with respect to the base in order to create a stable current flow. This forward-biased emitter causes the base-emitter junction to act as a diode, giving the transistor its “collector-base voltage” voltage drop. The collector-base voltage drop is the amount of voltage that is needed to turn the transistor on, and this voltage varies from transistor to transistor. The base current is also dependent upon the base-emitter voltage. This voltage must be greater than the forward voltage drop of the diode for current to flow in the circuit.

The collector-emitter voltage of the pre-biased BJT is also an important factor in determining the stability of the transistor. The collector-emitter voltage governs the distribution of carrier concentrations in the base region and thus the stability of the transistor. Furthermore, the forward current in the base must be greater during normal operation than the reverse current in order to enable the transistor to operate properly.

Conclusion

Single, pre-biased bipolar junction transistors offer many advantages over other types of transistors. These devices are used in a wide variety of applications, including telecommunications, computer, video and medical equipment. Their linearity, small size, and improved power handling capabilities are particularly beneficial in these applications. The working principle of these devices is dependent on the forward-biased emitter creating a diode, the collector-base voltage, and the collector-emitter voltage. Taken together, single, pre-biased bipolar junction transistors provide increased performance and reliability in a wide range of applications.

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