DTD143ECT116 Discrete Semiconductor Products |
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Allicdata Part #: | DTD143ECT116TR-ND |
Manufacturer Part#: |
DTD143ECT116 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 500MA/50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTD143ECT116 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03783 |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 47 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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.DTD143ECT116 bipolar transistors, also known as single pre-biased transistors, are a type of active electronic component that are used in a variety of electronic switch and amplifier applications. These transistors are useful in applications where a low power signal requires amplification to a level suitable for further processing. They are also used in applications where relatively low input impedance and high output impedance are desirable.
The DTD143ECT116 is a single-base, pre-biased bipolar transistor that can operate over a wide range of voltages. This type of transistor has two distinct semiconductor junctions, known as the collector and emitter. The collector junction is connected to the base and the emitter junction is connected to the emitter wire. The junction between the collector and emitter is formed by a thin layer of silicon, which acts as an insulator between the two junctions. When a voltage is applied to the base, it creates an electric field across the junction, which causes electrons to flow from the collector to the emitter. This current flow is known as the collector current, and it is controlled by the applied base voltage.
The working principle of a DTD143ECT116 pre-biased transistor is similar to that of any other bipolar transistor. When a voltage is applied to the base, it creates a large electric field, which causes a small current to flow through the transistor. This current is then amplified in the collector and emitter of the transistor, producing a much larger output current. This amplified output current is then used to drive a load, such as an amplifier or a switch.
The DTD143ECT116 is especially useful in applications requiring low power signals to be amplified to a level suitable for further processing. The fact that the transistor is pre-biased also makes it particularly useful in applications requiring a high input impedance and a low output impedance.
In summary, DTD143ECT116 transistors are single, pre-biased bipolar transistors that can be used in a variety of applications, including switches and amplifiers. The working principle of the transistor is similar to that of any bipolar transistor, but its pre-biased configuration makes it particularly useful in applications requiring a high input impedance and a low output impedance.
The specific data is subject to PDF, and the above content is for reference
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