DTD143ECT116 Allicdata Electronics

DTD143ECT116 Discrete Semiconductor Products

Allicdata Part #:

DTD143ECT116TR-ND

Manufacturer Part#:

DTD143ECT116

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN 500MA/50V DIGITAL TRANSISTOR
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD143ECT116 datasheetDTD143ECT116 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03783
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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DTD143ECT116 bipolar transistors, also known as single pre-biased transistors, are a type of active electronic component that are used in a variety of electronic switch and amplifier applications. These transistors are useful in applications where a low power signal requires amplification to a level suitable for further processing. They are also used in applications where relatively low input impedance and high output impedance are desirable.

The DTD143ECT116 is a single-base, pre-biased bipolar transistor that can operate over a wide range of voltages. This type of transistor has two distinct semiconductor junctions, known as the collector and emitter. The collector junction is connected to the base and the emitter junction is connected to the emitter wire. The junction between the collector and emitter is formed by a thin layer of silicon, which acts as an insulator between the two junctions. When a voltage is applied to the base, it creates an electric field across the junction, which causes electrons to flow from the collector to the emitter. This current flow is known as the collector current, and it is controlled by the applied base voltage.

The working principle of a DTD143ECT116 pre-biased transistor is similar to that of any other bipolar transistor. When a voltage is applied to the base, it creates a large electric field, which causes a small current to flow through the transistor. This current is then amplified in the collector and emitter of the transistor, producing a much larger output current. This amplified output current is then used to drive a load, such as an amplifier or a switch.

The DTD143ECT116 is especially useful in applications requiring low power signals to be amplified to a level suitable for further processing. The fact that the transistor is pre-biased also makes it particularly useful in applications requiring a high input impedance and a low output impedance.

In summary, DTD143ECT116 transistors are single, pre-biased bipolar transistors that can be used in a variety of applications, including switches and amplifiers. The working principle of the transistor is similar to that of any bipolar transistor, but its pre-biased configuration makes it particularly useful in applications requiring a high input impedance and a low output impedance.

The specific data is subject to PDF, and the above content is for reference

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