DTD143ECT216 Allicdata Electronics
Allicdata Part #:

DTD143ECT216-ND

Manufacturer Part#:

DTD143ECT216

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD143ECT216 datasheetDTD143ECT216 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04699
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Base Part Number: DTD143
Supplier Device Package: SST3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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Transistors play an important role in modern electronics as they act as switches and amplifiers. The DTD143ECT216 type of transistor is a pre-biased, single bipolar junction transistor (BJT) specifically designed to meet high buffering current requirements in automotive and industrial applications. This transistor can be used in a variety of applications where a high buffering capability is required, thus making it an ideal choice for a wide range of projects.

The DTD143ECT216 type of transistor comes in a variety of packages, including DIP, SOIC, and SOT23. It is an N-channel JFET that can be used to drive substantial currents. The transistor is designed to provide a high surround current and a very low gate threshold voltage. It is rated to reach up to 1.5A of buffering current with a collector-to-emitter voltage of 0.5V, and can handle up to 25V DC.

The transistor consists of three different terminals, also known as the Collector, Emitter and Base. The Collector collects the current supplied by the power source and draws it through the transistor, while the Emitter provides a path to the ground terminal. The Base is used to allow the collector and emitter current to flow by providing a voltage input that controls the transistor. In the DTD143ECT216 transistor, the collector is connected to an external power source and the base is biased before the use of any external signal.

The DTD143ECT216 transistor can be used for both digital and analog applications. In digital applications, it can be used for switching between two different levels, like driving high currents for actuators, relays, motors, etc. It can also be used to buffer signal levels from digital logic circuits or to provide a signal isolation from the main power supply. In analog applications, the transistor can be used to provide voltage regulation, signal amplification, and an interface between different power levels.

The working principle of the DTD143ECT216 transistor is based on the junction between the collector and emitter blocking current flow. When the base is stimulated with a small voltage, it allows the current to flow between the collector and emitter due to the base-emitter depletion region which creates an amplification of the signal. The inherent feedback of the transistor ensures a linear and predictable behavior. As the input voltage is increased, the output current increases as well, providing better signal resolution and higher dynamic range.

In conclusion, the DTD143ECT216 is a pre-biased, single bipolar junction transistor (BJT) specifically designed for buffering high currents in automotive and industrial applications. There is a wide range of packages available, and the transistor can be used for both digital and analog applications, offering excellent signal amplification and a very low gate voltage. With these features, it is an ideal choice for many projects and applications.

The specific data is subject to PDF, and the above content is for reference

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