DTD123TKT146 Discrete Semiconductor Products |
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Allicdata Part #: | DTD123TKT146TR-ND |
Manufacturer Part#: |
DTD123TKT146 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTD123TKT146 Datasheet/PDF |
Quantity: | 24000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.08404 |
6000 +: | $ 0.07895 |
15000 +: | $ 0.07385 |
30000 +: | $ 0.06791 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTD123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTD123TKT146 is a single, pre-biased bipolar junction transistor (BJT) used in a variety of applications such as audio amplification, video signal processing, power management, and digital communication. The device is a unique combination of high frequency, current gain and dynamic operation, making it ideal for applications requiring an optimized response time, frequency response, and linearity.
A bipolar junction transistor is a semiconductor device consisting of three terminals, namely emitter, base, and collector. It functions as a switching device. When a current is applied to the base terminal of the BJT, electrons are attracted from the emitter to the base, thereby cutting off the contact between the emitter and collector terminals. The magnitude of the current flowing through the base is then determined by the current gain associated with the device.
The DTD123TKT146 is a specifically designed BJT which is pre-biased for a variety of features and applications. The device features an integrated PNP resistor connected between the base and collector terminal to minimize the amount of current needed to be applied from an external source to achieve saturation. This also allows for a linear response that can be optimized for higher frequencies. Additionally, the device also comes with an integrated PNP capacitor connected between the base terminals and the emitter terminal to provide a fast response time for signal switching applications. The device is also designed for maximum current gain at low frequencies for optimal signal fidelity.
The DTD123TKT146 is manufactured with a high performance epitaxial base substrate, allowing for higher current gain at higher frequencies while providing linear characteristics at all frequencies. The device also utilizes a reversed transistor structure, with the collector connected to the emitter and the base connected to the collector, which allows for a better current gain at higher frequencies. This allows for greater accuracy and improved performance in response time, frequency response, and linearity.
The DTD123TKT146 is an ideal choice for a variety of applications requiring high performance and low power consumption. The pre-biased design and higher current gain capabilities make it well-suited for audio amplification, video signal processing, power management, and digital communication. Furthermore, the device\'s linear characteristics enable it to be used in a variety of filter and control functions, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DTD113ZUT106 | ROHM Semicon... | -- | 1000 | TRANS PREBIAS NPN 200MW U... |
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