DTD113ZCHZGT116

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):	500mA
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SST3

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Introduction The DTD113ZCHZGT116 is a single, pre-biased bipolar junction transistor (BJT) designed for applications where enhanced performance, improved reliability and low power consumption is desired. The device is designed to provide robust performance in a wide variety of applications including consumer electronics, computer peripherals, telecoms, industrial and medical systems.Application Fields The DTD113ZCHZGT116 provides a reliable solution for a wide range of applications. It is ideal for use in consumer electronics, computers and peripherals, telecoms, and industrial and medical systems. In consumer electronics, the DTD113ZCHZGT116 is suitable for audio amplifiers, motor control and RF amplifier designs. It is also suitable for digital signal processing and communicating devices. In computers and peripherals, the device is used in printer and monitor designs, video display circuits, disk drive designs, and peripheral interface converters.In telecoms, the device is used in power amplifiers, power control, line interface units and radio base stations. In the industrial sector, it is used in instrumentation, process control, and sensing and power management. In medical systems, the device is used to power amplifiers, power control and Low Power Medical Device designs.Working Principle The DTD113ZCHZGT116 is a single, pre-biased bipolar junction transistor. It consists of three components: the emitter, collector and base. The base is connected to the collector and is used to control the flow of current between the emitter and the collector. The device operates on the principle of avalanche multiplication.In the DTD113ZCHZGT116, avalanche multiplication occurs when the bias voltage between the base and the collector exceeds the breakdown voltage of the reverse base-emitter junction. This causes electrons to ‘avalanche’ from the base to the collector. This process multiplies the number of electrons that can cross the collector-emitter junction, and therefore increases the output current.Conclusion The DTD113ZCHZGT116 is a single, pre-biased bipolar junction transistor designed for applications that require improved reliability and low power consumption. It is suitable for a wide variety of applications, including consumer electronics, computers and peripherals, telecoms and industrial and medical systems. The device operates on the principle of avalanche multiplication, which occurs when the bias voltage between the base and the collector exceeds the breakdown voltage of the reverse base-emitter junction. This process multiplies the number of electrons that can cross the collector-emitter junction, and therefore increases the output current.

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