Allicdata Part #: | DTD113ZUT106TR-ND |
Manufacturer Part#: |
DTD113ZUT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTD113ZUT106 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTD113 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 50mA, 5V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTD113ZUT106 Transistor is a single pre-biased bipolar junction transistor (BJT). This type of transistor is useful in applications requiring the integration of two transistors in the same device, allowing greater miniaturization with the added benefit of lower power consumption.
BJTs operate in three regions: cutting-off, active, and saturation. In the cut-off region, no current flows through the transistor, while in the active region, current flows freely through the transistor. In the saturation region, current flow is limited by the saturation voltage, which is determined in part by the transistor’s gain.
At the heart of the DTD113ZUT106 is the base, a semiconductor material with three regions separated by two junctions. A small current of electrons enters the base through one junction, and larger current of electrons leaves at the other junction. The electrons leaving the base cause a larger current to flow from the transistor’s collector to its emitter, producing amplification.
When power is applied to the DTD113ZUT106, an initial current passes through the base, which is connected to a voltage source sufficient to forward-bias the junction. This offset of the base maintains current flow in the active region of the transistor until the signal voltage drops so far that the junction goes into reverse bias and the active region current shuts off.
In common emitter mode, the signal-input voltage is connected via a resistor to the base of the transistor. When the input voltage increases, the resistance increases, causing the current through the resistor network to decreases and voltage is divided between the emitter-base junction and the emitter load.
The operation of the DTD113ZUT106 transistor in common emitter configuration is shown in the following figure. The voltage applied to the base is the signal voltage, vin. Vout is the output voltage, the amplified signal from the collector. R1 is the base resistance, and Rc is the collector resistance.
The two junctions of the BJT create a small region of highly-doped material called a depletion region. This region acts as a diode and blocks any current that attempts to flow in the wrong direction (based on a BJT’s configuration). This protection is important to ensure that the device does not overheat or become damaged due to a reverse-biased voltage.
These same junctions make the DTD113ZUT106 pre-biased. This means the transistor is connected in a way that keeps the active region current flowing even when no input signal is applied. Pre-biasing can be done with an individual diode, a fixed voltage source, or a combination of the two. The pre-biasing helps ensure the transistor does not enter its cut-off region when changing its states.
Thanks to its pre-biasing, the DTD113ZUT106 is suitable for switching applications, such as amplifiers or logic circuits. The pre-biased transistor is particularly useful in such applications, as it allows the circuit design to be simplified. This simplification reduces the number of components required and therefore reduces the overall footprint of the circuit.
In summary, the DTD113ZUT106 is a single pre-biased bipolar junction transistor (BJT) suitable for use in logic circuits or amplifiers. It provides the added benefit of being simpler to design and requiring fewer components thanks to its pre-biasing characteristic. The pre-biased transistor is also more robust, as it is not as susceptible to damage from reverse-biased voltages.
The specific data is subject to PDF, and the above content is for reference
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