DTD114ECHZGT116 Discrete Semiconductor Products |
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Allicdata Part #: | DTD114ECHZGT116TR-ND |
Manufacturer Part#: |
DTD114ECHZGT116 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 500MA SST3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTD114ECHZGT116 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02739 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased + Diode |
Current - Collector (Ic) (Max): | 500mA |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SST3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTD114ECHZGT116 is a single, pre-biased, bipolar junction transistor (BJT) designed for use in various application fields. It is an NPN device that uses two p-n junctions connected in series. It has a stable operating temperature range of -55°C to +150°C, and a continuous collector current range of -40mA to +500mA. The DTD114ECHZGT116 has a voltage drop of 0.7V for the collector-base junction. The voltage gain of this device can reach up to 200. It also features good thermal stability and a low saturation voltage of 0.3V.
The DTD114ECHZGT116 is used in a variety of applications including high voltage sampling, in-circuit programming, oscilloscopes, PLC systems, and other applications. In general, it is used as a switch or to control the flow of signals in a circuit. Its pre-biased design allows it to work as a switch without the need for additional external bias components. It is also capable of operating in high-noise environments and has a high power output.
The working principle of the DTD114ECHZGT116 involves the current flow between the emitter and collector when the base voltage is applied. When the base voltage applied is greater than the collector voltage, electrons move from the emitter to the collector and a current will flow. This causes the collector voltage to drop. When the base voltage is equal to the collector voltage, no current will flow and the device does not have an effect in the circuit. By controlling the level of base voltage, the DTD114ECHZGT116 can be used to control the amount of current flowing from the collector to the emitter.
The DTD114ECHZGT116 is well-suited for applications that require excellent temperature stability, low saturation voltage, and a high voltage gain. Its pre-biased design also helps to reduce circuit complexity and external bias components may not be necessary in certain designs. Furthermore, its high power output and ability to operate in high-noise environments make it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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