Allicdata Part #: | DTD123TCT116TR-ND |
Manufacturer Part#: |
DTD123TCT116 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN 500MA/50V DIGITAL TRANSISTOR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTD123TCT116 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03783 |
Resistor - Base (R1): | 2.2 kOhms |
Supplier Device Package: | SST3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DTD123TCT116 application field and working principle
The DTD123TCT116 is a single, pre-biased bipolar junction transistor (BJT) in an advanced SOT363 package. This type of transistor is found most commonly in the power management, amplifiers, sensors and logic drivers applications. It is compatible with the range of electronic equipment from cell phones and laptops to automobile applications, due to its small size.
The DTD123TCT116 is composed of three main components: the emitter, the collector, and the base. The emitter is the connection between the transistor and the power source, while the collector serves as the connection between the transistor and the load. The base forms the bridge between the emitter and collector and carries the voltage of the power source. The DTD123TCT116\'s small size and low power consumption make it a great choice for applications that require low power consumption, such as laptop and cell phone batteries.
The DTD123TCT116 is designed to operate in either a common emitter or a common collector configuration. In order to understand the working principle of this transistor, it is important to understand the basic bipolar transistor characteristics. The voltage level that appears between the emitter and collector terminals is called the collector-emitter voltage (Vce). This voltage is related to the current level flowing through the collector-base junction, which is called the collector-base current (Icb). The amount of current flowing through the emitter-base junction (Ieb) is determined by the voltage applied to the base terminal of the transistor.
The DTD123TCT116 is a pre-biased transistor, which means that it has an internal bias voltage applied to the base terminal before operation. This bias voltage, along with the externally applied bias, will determine the amount of current flowing through the transistor. This current will determine the amount of voltage that is applied across the collector and emitter terminals, and the resulting current gain (hfe).
In addition to its pre-biased operation, the DTD123TCT116 has a wide range of input and output capacitances. These capacitances offer noise reduction and power savings benefits, depending on the application. Another important characteristic of the DTD123TCT116 is its low input bias current, which allows it to operate in a wide variety of conditions without the need for an external bias current source.
The DTD123TCT116 is a versatile transistor, due to its wide range of applications and its pre-biased operation. It is an ideal choice for power management, amplifiers, sensors and logic drivers applications where low power consumption and high performance are required. The low input bias current and high input and output capacitances also make it a great choice for noise reduction applications.
The specific data is subject to PDF, and the above content is for reference
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