DTD123TSTP Allicdata Electronics
Allicdata Part #:

DTD123TSTP-ND

Manufacturer Part#:

DTD123TSTP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 300MW SPT
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD123TSTP datasheetDTD123TSTP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT
Base Part Number: DTD123
Description

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The DTD123TSTP is a PNP silicon transistors with low voltage and high current capabilities that makes it suitable for multiple applications. It has a hFE rating of up to 100 and a continuous collector current of up to 350mA. Other features include fast switching speed with surge capability, high-speed reverse-mode (~50nsec) switching time, and a low collector to emitter saturation voltage.

The DTD123TSTP is a single pre-biased transistor that uses an external biasing voltage source to produce active levels at the output. This allows for the device to be used in applications that require active low operation. This is commonly seen in digital electronics where the active low will indicate a high value (logic 1) and the inactive value (logic 0) will be represented by a low value. The device can also be used in applications that require both active-low and active-high outputs. This can be achieved by varying the amount of current flow in the external bias source, so that the device can reach the desired logic level.

The working principle of the DTD123TSTP is based on the current flow from the base to the collector. The current is initially established by the external bias source, and this sets the output voltage. When the voltage at the base is increased beyond the set value, the current will flow from the collector to the emitter. This is known as forward biasing and causes the output voltage to increase. When the base voltage is decreased below the set level, the current flow is reversed, and this is known as reverse biasing. This causes the output voltage to decrease.

The DTD123TSTP is most commonly used in switch mode power supplies, sequencing applications, and logic level control systems. When used in power supplies, the transistor can provide fast switching and low output voltage capabilities. In sequencing applications, the device is able to provide a logic level signal with adjustable levels that can be used to control relays, switches, and other components. In logic level control systems, the device is used to provide proper logic level control with adjustable levels.

The DTD123TSTP offers multiple advantages, including extremely low operating current, excellent turn-on and turn-off times, easy external biasing, low on-resistance, and low saturation voltage at the collector. The device is available in various packages and offers flexibility for various types of applications. This makes it an ideal choice for those looking for a reliable and feature-rich transistor for their applications.

In conclusion, the DTD123TSTP is a single pre-biased transistor from NXP Semiconductor. It is versatile and has excellent performance capabilities, making it suitable for many different types of applications. The device is available in a variety of packages, making it an ideal choice for power supply, sequencing, and logic level control systems.

The specific data is subject to PDF, and the above content is for reference

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