ES1AL RFG Allicdata Electronics
Allicdata Part #:

ES1ALRFG-ND

Manufacturer Part#:

ES1AL RFG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 50V 1A SUB SMA
More Detail: Diode Standard 50V 1A Surface Mount Sub SMA
DataSheet: ES1AL RFG datasheetES1AL RFG Datasheet/PDF
Quantity: 1000
9000 +: $ 0.05001
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Electronic Rectifier Field-Effect Transistor (ES1AL RFG) is a special power conversion technology for Electronics application that utilizes an electrically conductive channel of semiconductor material to regulate the conduction between source and drain terminals. This technology has been widely adopted in providing power conversion from higher voltages and varying power formats to desired levels required for microelectronic components.

The ES1AL RFG rectifier field-effect transistor is used either as a rectifier or as a switch. In rectifier mode, the ES1AL RFG transistor is driven by a sinusoidal current, which is then rectified by the transistor to become a DC load. In switch mode, the transistor is typically operated in either a cutoff or a saturation state and can switch between the two states reversibly.

The working principle of the ES1AL RFG rectifier field-effect transistor is based on the field effect principle. The gate terminal of the transistor is biased at a suitable voltage which induces a potential barrier or field in the channel. This field influences the conduction of current in the channel, either blocking or allowing the current to flow through the transistor. This ability to control the current flow with the gate voltage makes the transistor ideal for rectifier or switch applications.

To make full use of the rectifier field-effect transistor’s full functionality, extra circuit elements such as resistors, capacitors, and inductors are often added for protection, such as for over-current protection and heat dissipation. The gate terminal of the transistor is also fitted with special protective devices like zener diodes in order to limit the operating voltage, and to reduce damage to the transistor due to electrical overstress.

The resistance of the ES1AL RFG rectifier field-effect transistor can be changed depending on the type of material chosen, and this offers another degree of flexibility in power conversion applications. For example, an n-type silicon material offers a higher resistance than a p-type, which offers superior efficiency in dc-to-dc power conversion circuits.

The ES1AL RFG rectifier field-effect transistor has become an invaluable tool for power conversion, providing high accuracy and efficiency in measuring and control of power conversion processes. This highly reliable and versitile technology has been widely adopted in numerous electronic applications such as wireless telecommunications, electronic appliances, automotive systems and even space exploration.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ES1A" Included word is 40
Part Number Manufacturer Price Quantity Description
ES1A-E3/5AT Vishay Semic... -- 1000 DIODE GEN PURP 50V 1A DO2...
ES1AL M2G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A M2G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1ALHRHG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A R3G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1AL RVG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AL R3G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AHM2G Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1AL RFG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AHR3G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1AHE3_A/I Vishay Semic... 0.08 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1ALHR3G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AL RQG Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A ON Semicondu... -- 7500 DIODE GEN PURP 50V 1A SMA...
ES1AHE3/5AT Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1ALHM2G Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AE-TP Micro Commer... 0.06 $ 6000 DIODE GEN PURP 50V 1A DO2...
ES1AL MHG Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AHE3/61T Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1ALHMHG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AL RHG Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A-M3/61T Vishay Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1A-M3/5AT Vishay Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1AHE3_A/H Vishay Semic... -- 1000 DIODE GEN PURP 50V 1A DO2...
ES1A-E3/61T Vishay Semic... -- 1000 DIODE GEN PURP 50V 1A DO2...
ES1AL RTG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A-13 Diodes Incor... 0.0 $ 1000 DIODE GEN PURP 50V 1A SMA...
ES1ALHMQG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AL RUG Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A-TP Micro Commer... 0.06 $ 1000 DIODE GEN PURP 50V 1A DO2...
ES1AL MQG Taiwan Semic... 0.05 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1ALHMTG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1A-LTP Micro Commer... 0.05 $ 5000 DIODE GEN PURP 50V 1A DO2...
ES1ALHRUG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1ALHRQG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1ALHRTG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AL MTG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1ALHRFG Taiwan Semic... 0.06 $ 1000 DIODE GEN PURP 50V 1A SUB...
ES1AWB B&B Smar... 0.0 $ 1000 SERIAL DEVICE SERVER 1-PO...
ES1A-13-F Diodes Incor... -- 45000 DIODE GEN PURP 50V 1A SMA...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics