FDP10N60NZ Allicdata Electronics
Allicdata Part #:

FDP10N60NZ-ND

Manufacturer Part#:

FDP10N60NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 10A TO-220
More Detail: N-Channel 600V 10A (Tc) 185W (Tc) Through Hole TO-...
DataSheet: FDP10N60NZ datasheetFDP10N60NZ Datasheet/PDF
Quantity: 898
Stock 898Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 185W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1475pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: UniFET-II™
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FDP10N60NZ is a N-Channel MOSFET and is part of the 10N series. This particular MOSFET is qualified according to JEDEC 1N-level and is offered in a package of TO-220. It has an improved energy efficiency and temperature performance compared to other MOSFETs in the series. This makes it ideal for use in a wide range of applications. In this article, we will discuss the application field and working principle of this MOSFET.

The FDP10N60NZ is designed for use in power switching applications. It is suitable for high frequency, high voltage and high current power switching applications such as synchronous rectification, active ORing and high frequency dc-dc converters. Its low on-resistance and low gate charge allow for fast switching speeds and excellent thermal management. Its low capacitance also makes it suitable for high-frequency applications. This MOSFET can handle up to 600 volts and can deliver up to 10 amps of current.

The FDP10N60NZ works by using the MOSFET principle. The MOSFET is a type of transistor which uses two terminals, the source and the drain, to control current flow. The source is the positive terminal while the drain is the negative terminal. The third terminal, the gate, is used to provide a voltage that will control the current flowing through the device. When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons and creates a conductive channel between the source and the drain.

The FDP10N60NZ utilizes a special type of MOSFET known as a depletion mode MOSFET. This type of MOSFET has a reverse-biased p-n junction between the drain and the source. When the gate voltage is zero, a large current flows between the two terminals, causing the device to be in an “on” state. When a positive voltage is applied to the gate terminal, the charge in the p-n junction decreases and the current flow is reduced. This causes the device to be in an “off” state.

The FDP10N60NZ is designed for use in a variety of applications. It can be used for high-frequency power switching, including synchronous rectification and active ORing. It can also be used as a DC-DC converter. For these applications, the device comes pre-mounted onto a TO-220 package which is designed to dissipate heat quickly and efficiently. This ensures that the device is able to operate reliably in high-intensity applications.

In summary, the FDP10N60NZ is a N-Channel MOSFET designed for use in high frequency, high voltage, and high current power switching applications. It utilizes the MOSFET principle and is a depletion mode MOSFET. The device comes pre-mounted onto a TO-220 package and is capable of handling up to 600 volts and delivering up to 10 amps of current. This makes it ideal for use in a variety of applications, including high-frequency power switching, synchronous rectification, active ORing and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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