FDP150N10A-F102

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	91W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1440pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	15 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FDP150N10A-F102 Application Field and Working PrincipleThe FDP150N10A-F102 is a field-effect transistor (FET) that belongs to the FDP Family from Fairchild Semiconductor. It is a single-channel non-logic n-type MOSFET that is widely used as a load and power switch in a variety of applications. This FET is robust, low cost, and energy-efficient making it suitable for a wide range of uses.General Specifications and FeaturesThe FDP150N10A-F102 is a part of the FDP family, which has the following characteristics and features:• Average Drain Current (Id) of 150mA• Drain-Source Voltage (VDS) of 10V• On-state Resistance (RDS (on)) of 0.01 • Single-channel non-logic n-type MOSFET• Low gate threshold voltage• Low-cost and energy-efficient• Robust and reliable performanceThe FDP150N10A-F102 has the following parameters and ratings:• Drain-Source Breakdown Voltage (BVB) of 8V• Maximum Gate-Source Voltage (VGS Max.) of ±20V• Maximum drain current (Id Max.) of 150mA• Maximum Power Dissipation (Ptot Max.) of 3W• Operating Temperature Range (TJ) of -55°C to +150°C Application Fields and Working PrincipleThe FDP150N10A-F102 is suitable for a variety of applications, such as in: • Automotive applications• Industrial motor control • Remote control systems • Drive circuits for electronic appliances and toys • High precision switching circuits with powerThe FDP150N10A-F102 is an n-type MOSFET, and works by letting current flow from the source to the drain when a voltage is applied to the gate. This MOSFET is controlled by the gate voltage, via the principle of electrostatic induction. When an adequate voltage is applied to the gate, the electric field created leads to the formation of a conductive channel between the source and the drain, thus allowing the current to flow. When the gate voltage is removed, the electric field is removed, leading to the blocking of the current flow. The FDP150N10A-F102 can handle large amounts of power and current, making it highly efficient in its applications. Thanks to its wide range of power and current handling capacity, the reliability of this MOSFET is enhanced and it is suitable for a variety of industrial applications. ConclusionIn conclusion, the FDP150N10A-F102 is a single-channel non-logic n-type MOSFET used as a load and power switch in various applications. This MOSFET is robust, low cost and energy efficient and is currently in use in automotive, industrial motor control and other electronic appliances. This MOSFET works by letting current flow from the source to the drain when a voltage is applied to the gate. The FDP150N10A-F102 offers a wide range of power and current handling capacity, making it highly efficient and reliable for its applications.

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