Allicdata Part #: | FDP16AN08A0FS-ND |
Manufacturer Part#: |
FDP16AN08A0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 75V 58A TO-220AB |
More Detail: | N-Channel 75V 9A (Ta), 58A (Tc) 135W (Tc) Through ... |
DataSheet: | FDP16AN08A0 Datasheet/PDF |
Quantity: | 760 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1857pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 58A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 58A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDP16AN08A0 is a self-contained logic level, N-channel MOSFET designed for a multitude of applications. The device features a large gate-to-source voltage rating (VGS), high peak current capability, and low on resistance.
Applications for the FDP16AN08A0 include DC/DC converters, switching regulators, motor control, load switching, and small signal/power switching. The device is highly suitable for use in power circuits requiring low on-resistance and fast switching.
Working Principle
At the heart of the FDP16AN08A0 is the metal-oxide-semiconductor field effect transistor (MOSFET). The MOSFET is a type of transistor that uses the motion of electrons in an electric field to switch between on and off states. This transistor is designed with a gate, drain, and source, each having their own electrical properties. By applying a voltage to the gate, the transistor can switch between conducting and non-conducting states, and this on/off behavior is the basis for virtually all electronic circuits.
In the case of the FDP16AN08A0, the gate-to-source voltage, or VGS, is the primary parameter that determines the device’s on-state resistance. A high VGS will result in a low on-state resistance, enabling high current capability. This makes the FDP16AN08A0 an ideal choice for applications where high current is required.
In addition, the FDP16AN08A0 has a very low gate charge, which is important for high frequency applications. The FDP16AN08A0 can switch quickly between on and off states, allowing it to handle switching frequencies up to 1.8MHz.
Conclusion
The FDP16AN08A0 is a self-contained logic level, N-channel MOSFET designed for a multitude of applications. Its high gate-to-source voltage (VGS) rating, peak current capability, and low on-resistance make it an ideal choice for DC/DC converters, switching regulators, motor control, load switching, and small signal/power switching. In addition, the FDP16AN08A0 has a very low gate charge, which is important for high frequency applications. The device is a reliable, efficient solution for a variety of power control and switching applications.
The specific data is subject to PDF, and the above content is for reference
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